Hexon Technology Pte Ltd HEXON 1GB vs Corsair CMK16GX4M4A2666C15 4GB

总分

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分

Corsair CMK16GX4M4A2666C15 4GB

Corsair CMK16GX4M4A2666C15 4GB

差异规格评论

差异

Hexon Technology Pte Ltd HEXON 1GB

需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB

报告一个错误

更快的读取速度，GB/s

3 13.8

测试中的平均数值

Corsair CMK16GX4M4A2666C15 4GB

需要考虑的原因
Corsair CMK16GX4M4A2666C15 4GB

报告一个错误

低于PassMark测试中的延时，ns

40 62

左右 -55% 更低的延时
更快的写入速度，GB/s

10.5 1,843.6

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Hexon Technology Pte Ltd HEXON 1GB

Corsair CMK16GX4M4A2666C15 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 40
读取速度，GB/s

3,556.6 13.8
写入速度，GB/s

1,843.6 10.5
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

542 2755

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMW32GX4M2Z3600C14 16GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

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AMD R5316G1609U2K 8GB

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Kingston KVR16N11/8-SP 8GB

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Netac Technology Co Ltd E40832A 8GB

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Samsung M471A2K43EB1-CTD 16GB

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Team Group Inc. TEAMGROUP-UD4-3200 8GB

Team Group Inc. TEAMGROUP-UD4-3200 8GB

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Crucial Technology BLT4G3D1337DT1TX0. 4GB

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Crucial Technology CT8G4SFS8266.C8FJ 8GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Patriot Memory (PDP Systems) 3600 C14 Series 8GB

Patriot Memory (PDP Systems) 3600 C14 Series 8GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

G Skill Intl F4-3600C19-16GTRS 16GB

G Skill Intl F4-3600C19-16GTRS 16GB

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

Kingston 9905630-033.A00G 16GB

Kingston 9905630-033.A00G 16GB