Hexon Technology Pte Ltd HEXON 1GB vs Corsair CMK32GX4M2Z3200C16 16GB

总分

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分

Corsair CMK32GX4M2Z3200C16 16GB

Corsair CMK32GX4M2Z3200C16 16GB

差异规格评论

差异

Hexon Technology Pte Ltd HEXON 1GB

需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB

报告一个错误

更快的读取速度，GB/s

3 17.8

测试中的平均数值

Corsair CMK32GX4M2Z3200C16 16GB

需要考虑的原因
Corsair CMK32GX4M2Z3200C16 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 62

左右 -107% 更低的延时
更快的写入速度，GB/s

15.2 1,843.6

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Hexon Technology Pte Ltd HEXON 1GB

Corsair CMK32GX4M2Z3200C16 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 30
读取速度，GB/s

3,556.6 17.8
写入速度，GB/s

1,843.6 15.2
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

542 3628

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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SK Hynix HMA851U6DJR6N-XN 4GB

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Kingmax Semiconductor KLDE88F-B8MO5 2GB

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G Skill Intl F4-3200C16-16GTZRX 16GB

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Kingston 9905403-444.A00LF 4GB

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

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Crucial Technology CT4G4DFS8266.C8FG 4GB

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Samsung M378B5773CH0-CH9 2GB

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Kingston 9905403-500.A01LF 8GB

Kingston 9905403-500.A01LF 8GB

G Skill Intl F4-3200C16-8GTZKW 8GB

G Skill Intl F4-3200C16-8GTZKW 8GB

SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

Crucial Technology CT4G4DFS824A.C8FDD2 4GB

Crucial Technology CT4G4DFS824A.C8FDD2 4GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

Samsung M378A1K43BB2-CTD 8GB

Samsung M378A1K43BB2-CTD 8GB

Kingston 9905403-515.A00LF 8GB

Kingston 9905403-515.A00LF 8GB

G Skill Intl F4-2133C15-8GVR 8GB

G Skill Intl F4-2133C15-8GVR 8GB