Hexon Technology Pte Ltd HEXON 1GB vs Corsair CMT32GX4M2E3200C16 16GB

总分

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分

Corsair CMT32GX4M2E3200C16 16GB

Corsair CMT32GX4M2E3200C16 16GB

差异规格评论

差异

Hexon Technology Pte Ltd HEXON 1GB

需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB

报告一个错误

更快的读取速度，GB/s

3 15.5

测试中的平均数值

Corsair CMT32GX4M2E3200C16 16GB

需要考虑的原因
Corsair CMT32GX4M2E3200C16 16GB

报告一个错误

低于PassMark测试中的延时，ns

42 62

左右 -48% 更低的延时
更快的写入速度，GB/s

14.1 1,843.6

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Hexon Technology Pte Ltd HEXON 1GB

Corsair CMT32GX4M2E3200C16 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 42
读取速度，GB/s

3,556.6 15.5
写入速度，GB/s

1,843.6 14.1
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

542 3170

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Peak Electronics 256X64M-67E 2GB

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Samsung SF4641G8CKHI6DFSDS 8GB

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Samsung M393B1K70CH0-YH9 8GB

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Kingston KF552C40-16 16GB

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Gloway International (HK) STKD4GAM2400-F 8GB

Gloway International (HK) STKD4GAM2400-F 8GB

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Samsung M378B5173BH0-CH9 4GB

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Crucial Technology CT16G4DFD824A.M16FJ 16GB

Kingston 9905403-437.A01LF 4GB

Kingston 9905403-437.A01LF 4GB

Apacer Technology 78.CAGQ7.ARC0B 8GB

Apacer Technology 78.CAGQ7.ARC0B 8GB

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Corsair CMZ16GX3M2A2400C10 8GB

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Crucial Technology BL16G32C16U4BL.M8FB1 16GB

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Kingston 99U5469-045.A00LF 4GB

Essencore Limited KD48GU880-32A160X 8GB

Essencore Limited KD48GU880-32A160X 8GB