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Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology BLS8G4D240FSBK.8FD 8GB

Hexon Technology Pte Ltd HEXON 1GB vs Crucial Technology BLS8G4D240FSBK.8FD 8GB

总分
star star star star star
Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分
star star star star star
Crucial Technology BLS8G4D240FSBK.8FD 8GB

Crucial Technology BLS8G4D240FSBK.8FD 8GB

差异 规格 评论

差异

Hexon Technology Pte Ltd HEXON 1GB 需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 14.9
    测试中的平均数值
Crucial Technology BLS8G4D240FSBK.8FD 8GB 需要考虑的原因
Crucial Technology BLS8G4D240FSBK.8FD 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 62
    左右 -130% 更低的延时
  • 更快的写入速度，GB/s
    12.9 left arrow 1,843.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology BLS8G4D240FSBK.8FD 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    62 left arrow 27
  • 读取速度，GB/s
    3,556.6 left arrow 14.9
  • 写入速度，GB/s
    1,843.6 left arrow 12.9
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    542 left arrow 3271

Hexon Technology Pte Ltd HEXON 1GB RAM的比较

SpecTek Incorporated CONQUR6672GB-A023- 2GB
Qimonda 72T512220EP3SC2 4GB

Crucial Technology BLS8G4D240FSBK.8FD 8GB RAM的比较

Corsair CM5S16GM4800A40K2 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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内存RAM
Hexon Technology Pte Ltd HEXON 1GB
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Crucial Technology BLS8G4D240FSBK.8FD 8GB
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内存RAM
G Skill Intl F3-2400C11-8GSR 8GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
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内存RAM
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内存RAM
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内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
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Corsair CMK32GX4M2C3200C18 16GB
内存RAM