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Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB

Hexon Technology Pte Ltd HEXON 1GB vs Crucial Technology BLS8G4D240FSE.M16FAD 8GB

总分
star star star star star
Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分
star star star star star
Crucial Technology BLS8G4D240FSE.M16FAD 8GB

Crucial Technology BLS8G4D240FSE.M16FAD 8GB

差异 规格 评论

差异

Hexon Technology Pte Ltd HEXON 1GB 需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 13
    测试中的平均数值
Crucial Technology BLS8G4D240FSE.M16FAD 8GB 需要考虑的原因
Crucial Technology BLS8G4D240FSE.M16FAD 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 62
    左右 -94% 更低的延时
  • 更快的写入速度，GB/s
    8.6 left arrow 1,843.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    62 left arrow 32
  • 读取速度，GB/s
    3,556.6 left arrow 13.0
  • 写入速度，GB/s
    1,843.6 left arrow 8.6
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    542 left arrow 2243

Hexon Technology Pte Ltd HEXON 1GB RAM的比较

SpecTek Incorporated CONQUR6672GB-A023- 2GB
Qimonda 72T512220EP3SC2 4GB

Crucial Technology BLS8G4D240FSE.M16FAD 8GB RAM的比较

Crucial Technology BLT16G4D30AETA.K16FB 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB
内存RAM
Samsung M4 70T2864QZ3-CF7 1GB
Samsung M4 70T2864QZ3-CF7 1GB
G Skill Intl F4-4400C19-16GTZR 16GB
G Skill Intl F4-4400C19-16GTZR 16GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
A-DATA Technology AO2P21FC4R1-BRFS 4GB
A-DATA Technology AO2P21FC4R1-BRFS 4GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Patriot Memory (PDP Systems) 4400 C18 Series 8GB
Patriot Memory (PDP Systems) 4400 C18 Series 8GB
内存RAM
Kingston MSI16D3LS1MNG/8G 8GB
Kingston MSI16D3LS1MNG/8G 8GB
Patriot Memory (PDP Systems) 3600 C18 Series 32GB
Patriot Memory (PDP Systems) 3600 C18 Series 32GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Essencore Limited KD4AGU880-34A170X 16GB
Essencore Limited KD4AGU880-34A170X 16GB
内存RAM
Kingston 99U5429-014.A00LF 4GB
Kingston 99U5429-014.A00LF 4GB
Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB
Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB
内存RAM
Kingston 99U5428-040.A00LF 4GB
Kingston 99U5428-040.A00LF 4GB
G Skill Intl F4-4000C16-8GVK 8GB
G Skill Intl F4-4000C16-8GVK 8GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Corsair CM4B8G1J2400A16K2-ON 8GB
Corsair CM4B8G1J2400A16K2-ON 8GB
内存RAM
Kingston 99U5403-465.A00LF 8GB
Kingston 99U5403-465.A00LF 8GB
G Skill Intl F4-3400C16-8GTZ 8GB
G Skill Intl F4-3400C16-8GTZ 8GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Kingston MSI21D4S15HAG/8G 8GB
Kingston MSI21D4S15HAG/8G 8GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
Kingston 9965600-005.A00G 16GB
Kingston 9965600-005.A00G 16GB
内存RAM
SK Hynix HMT151R7TFR4C-H9 4GB
SK Hynix HMT151R7TFR4C-H9 4GB
Micron Technology 36ASF4G72PZ-2G3A1 32GB
Micron Technology 36ASF4G72PZ-2G3A1 32GB
内存RAM
Kingston 99P5471-002.A00LF 2GB
Kingston 99P5471-002.A00LF 2GB
Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB
Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB
内存RAM