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Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-3000C15-4GRR 4GB

Hexon Technology Pte Ltd HEXON 1GB vs G Skill Intl F4-3000C15-4GRR 4GB

总分
star star star star star
Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分
star star star star star
G Skill Intl F4-3000C15-4GRR 4GB

G Skill Intl F4-3000C15-4GRR 4GB

差异 规格 评论

差异

Hexon Technology Pte Ltd HEXON 1GB 需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 15
    测试中的平均数值
G Skill Intl F4-3000C15-4GRR 4GB 需要考虑的原因
G Skill Intl F4-3000C15-4GRR 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 62
    左右 -72% 更低的延时
  • 更快的写入速度，GB/s
    12.0 left arrow 1,843.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-3000C15-4GRR 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    62 left arrow 36
  • 读取速度，GB/s
    3,556.6 left arrow 15.0
  • 写入速度，GB/s
    1,843.6 left arrow 12.0
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    542 left arrow 2946

Hexon Technology Pte Ltd HEXON 1GB RAM的比较

SpecTek Incorporated CONQUR6672GB-A023- 2GB
Qimonda 72T512220EP3SC2 4GB

G Skill Intl F4-3000C15-4GRR 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
TwinMOS 8DHE3MN8-HATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-3000C15-4GRR 4GB
G Skill Intl F4-3000C15-4GRR 4GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Essencore Limited KD48GS481-26N1600 8GB
Essencore Limited KD48GS481-26N1600 8GB
内存RAM
Samsung M378T5663QZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
Corsair CMR16GX4M2C 8GB
Corsair CMR16GX4M2C 8GB
内存RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
SK Hynix HMA82GS6DJR8N-VK 16GB
SK Hynix HMA82GS6DJR8N-VK 16GB
内存RAM
Elpida EBJ81UG8BBU0-GN-F 8GB
Elpida EBJ81UG8BBU0-GN-F 8GB
Kingston 9965589-024.D01G 16GB
Kingston 9965589-024.D01G 16GB
内存RAM
Kingston 9905316-106.A02LF 1GB
Kingston 9905316-106.A02LF 1GB
Corsair CMG16GX4M2D3600C18 8GB
Corsair CMG16GX4M2D3600C18 8GB
内存RAM
SK Hynix HMT41GU7BFR8A-PB 8GB
SK Hynix HMT41GU7BFR8A-PB 8GB
Kingston KHX2666C15S4/16G 16GB
Kingston KHX2666C15S4/16G 16GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Crucial Technology BLS4G4D26BFSC.8FB 4GB
Crucial Technology BLS4G4D26BFSC.8FB 4GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Panram International Corporation W4U3200PS-16G 16GB
Panram International Corporation W4U3200PS-16G 16GB
内存RAM
Unifosa Corporation HU564404EP0200 4GB
Unifosa Corporation HU564404EP0200 4GB
Corsair CMK64GX4M2C3200C16 32GB
Corsair CMK64GX4M2C3200C16 32GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Asgard VMA45UG-MIC1U22T2 8GB
Asgard VMA45UG-MIC1U22T2 8GB
内存RAM
Samsung M471B5173BH0-CK0 4GB
Samsung M471B5173BH0-CK0 4GB
Patriot Memory (PDP Systems) 3600 C20 Series 8GB
Patriot Memory (PDP Systems) 3600 C20 Series 8GB
内存RAM
Kingston 99U5403-050.A00LF 4GB
Kingston 99U5403-050.A00LF 4GB
Apacer Technology GD2.1129WH.001 16GB
Apacer Technology GD2.1129WH.001 16GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Corsair CMK16GX4M4B3333C16 4GB
Corsair CMK16GX4M4B3333C16 4GB
内存RAM