Hexon Technology Pte Ltd HEXON 1GB vs G Skill Intl F4-3200C15-8GTZKY 8GB

总分

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分

G Skill Intl F4-3200C15-8GTZKY 8GB

G Skill Intl F4-3200C15-8GTZKY 8GB

差异规格评论

差异

Hexon Technology Pte Ltd HEXON 1GB

需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB

报告一个错误

更快的读取速度，GB/s

3 19.4

测试中的平均数值

G Skill Intl F4-3200C15-8GTZKY 8GB

需要考虑的原因
G Skill Intl F4-3200C15-8GTZKY 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 62

左右 -148% 更低的延时
更快的写入速度，GB/s

15.5 1,843.6

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Hexon Technology Pte Ltd HEXON 1GB

G Skill Intl F4-3200C15-8GTZKY 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 25
读取速度，GB/s

3,556.6 19.4
写入速度，GB/s

1,843.6 15.5
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

542 3673

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

G Skill Intl F4-2666C18-16GRS 16GB

G Skill Intl F4-2666C18-16GRS 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Micron Technology 8ATF1G64HZ-2G3E2 8GB

Micron Technology 8ATF1G64HZ-2G3E2 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

G Skill Intl F4-3200C15-8GTZKY 8GB

G Skill Intl F4-3200C15-8GTZKY 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Corsair CMK16GX4M2K3600C19 8GB

Corsair CMK16GX4M2K3600C19 8GB

takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

G Skill Intl F4-2933C14-8GTZRX 8GB

G Skill Intl F4-2933C14-8GTZRX 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Samsung M393A4K40CB2-CTD 32GB

Samsung M393A4K40CB2-CTD 32GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology BLS16G4D240FSC.16FBR 16GB

Crucial Technology BLS16G4D240FSC.16FBR 16GB

SK Hynix HYMP125S64CP8-S6 2GB

SK Hynix HYMP125S64CP8-S6 2GB

Kingston XK2M26-MIE 16GB

Kingston XK2M26-MIE 16GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Crucial Technology CT16G4SFD8266.C16FJ 16GB

Crucial Technology CT16G4SFD8266.C16FJ 16GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Apacer Technology 78.CAGP7.4020B 8GB

Apacer Technology 78.CAGP7.4020B 8GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Apacer Technology 78.DAGP2.4030B 16GB

Apacer Technology 78.DAGP2.4030B 16GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

Transcend Information TS1GLH64V4B 8GB

Transcend Information TS1GLH64V4B 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

Gold Key Technology Co Ltd NMUD480E82-3200E 8GB

Gold Key Technology Co Ltd NMUD480E82-3200E 8GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N