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Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-4266C19-8GTZKW 8GB

Hexon Technology Pte Ltd HEXON 1GB vs G Skill Intl F4-4266C19-8GTZKW 8GB

总分
star star star star star
Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分
star star star star star
G Skill Intl F4-4266C19-8GTZKW 8GB

G Skill Intl F4-4266C19-8GTZKW 8GB

差异 规格 评论

差异

Hexon Technology Pte Ltd HEXON 1GB 需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 16.5
    测试中的平均数值
G Skill Intl F4-4266C19-8GTZKW 8GB 需要考虑的原因
G Skill Intl F4-4266C19-8GTZKW 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 62
    左右 -77% 更低的延时
  • 更快的写入速度，GB/s
    14.8 left arrow 1,843.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-4266C19-8GTZKW 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    62 left arrow 35
  • 读取速度，GB/s
    3,556.6 left arrow 16.5
  • 写入速度，GB/s
    1,843.6 left arrow 14.8
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    542 left arrow 3336

Hexon Technology Pte Ltd HEXON 1GB RAM的比较

SpecTek Incorporated CONQUR6672GB-A023- 2GB
Qimonda 72T512220EP3SC2 4GB

G Skill Intl F4-4266C19-8GTZKW 8GB RAM的比较

Kingston 9905403-444.A00LF 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Unifosa Corporation HU564404EP0200 4GB
G Skill Intl F4-4266C16-8GTZR 8GB
G Skill Intl F4-4266C16-8GTZR 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Kingston 9965589-007.D01G 8GB
Kingston 9965589-007.D01G 8GB
内存RAM
Kingston KHX318C10FR/8G 8GB
Kingston KHX318C10FR/8G 8GB
G Skill Intl F4-2666C19-8GSXK 8GB
G Skill Intl F4-2666C19-8GSXK 8GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Micron Technology 16ATF2G64AZ-2G6E1 16GB
Micron Technology 16ATF2G64AZ-2G6E1 16GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Ramsta Ramsta-2666MHz-4G 4GB
Ramsta Ramsta-2666MHz-4G 4GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
SK Hynix HMA451R7MFR8N-TFTD 4GB
SK Hynix HMA451R7MFR8N-TFTD 4GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Corsair CMT64GX4M8X3600C18 8GB
Corsair CMT64GX4M8X3600C18 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Apacer Technology 76.C102G.D170B 8GB
Apacer Technology 76.C102G.D170B 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Apacer Technology 78.C1GMM.AUF0B 8GB
Apacer Technology 78.C1GMM.AUF0B 8GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Apacer Technology 78.C2GFK.AR20B 8GB
Apacer Technology 78.C2GFK.AR20B 8GB
内存RAM
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Crucial Technology CT4G4DFS8213.C8FAR11 4GB
Crucial Technology CT4G4DFS8213.C8FAR11 4GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Panram International Corporation W4U2400PS-4G 4GB
Panram International Corporation W4U2400PS-4G 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB
Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
EVGA 16G-D4-2666-MR 4GB
EVGA 16G-D4-2666-MR 4GB
内存RAM