Hexon Technology Pte Ltd HEXON 1GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB

Hexon Technology Pte Ltd HEXON 1GB vs Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB

总分

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB

差异规格评论

差异

Hexon Technology Pte Ltd HEXON 1GB

需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB

报告一个错误

更快的读取速度，GB/s

3 14.3

测试中的平均数值

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 62

左右 -121% 更低的延时
更快的写入速度，GB/s

11.4 1,843.6

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Hexon Technology Pte Ltd HEXON 1GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 28
读取速度，GB/s

3,556.6 14.3
写入速度，GB/s

1,843.6 11.4
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

542 2481

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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