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Hexon Technology Pte Ltd HEXON 1GB
King Tiger Technology Tigo-2133Mhz-8G 8GB

Hexon Technology Pte Ltd HEXON 1GB vs King Tiger Technology Tigo-2133Mhz-8G 8GB

总分
star star star star star
Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分
star star star star star
King Tiger Technology Tigo-2133Mhz-8G 8GB

King Tiger Technology Tigo-2133Mhz-8G 8GB

差异 规格 评论

差异

Hexon Technology Pte Ltd HEXON 1GB 需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 15.6
    测试中的平均数值
King Tiger Technology Tigo-2133Mhz-8G 8GB 需要考虑的原因
King Tiger Technology Tigo-2133Mhz-8G 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 62
    左右 -158% 更低的延时
  • 更快的写入速度，GB/s
    12.0 left arrow 1,843.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Hexon Technology Pte Ltd HEXON 1GB
King Tiger Technology Tigo-2133Mhz-8G 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    62 left arrow 24
  • 读取速度，GB/s
    3,556.6 left arrow 15.6
  • 写入速度，GB/s
    1,843.6 left arrow 12.0
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    542 left arrow 2729

Hexon Technology Pte Ltd HEXON 1GB RAM的比较

SpecTek Incorporated CONQUR6672GB-A023- 2GB
Qimonda 72T512220EP3SC2 4GB

King Tiger Technology Tigo-2133Mhz-8G 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Crucial Technology CT8G4DFS824A.M8FH 8GB
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内存RAM
Hexon Technology Pte Ltd HEXON 1GB
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King Tiger Technology Tigo-2133Mhz-8G 8GB
King Tiger Technology Tigo-2133Mhz-8G 8GB
内存RAM
Samsung M471A5244CB0-CWE 4GB
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Kingston 9965662-016.A00G 16GB
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内存RAM
Samsung M393B2G70BH0-CK0 16GB
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内存RAM
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Micron Technology 8ATF2G64AZ-3G2B1 16GB
内存RAM
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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
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G Skill Intl F4-3466C16-8GTZR 8GB
内存RAM
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Nanya Technology M2N1G64TUH8D5F-AC 1GB
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Kingston ACR16D3LS1NGG/4G 4GB
Micron Technology 16ATF2G64HZ-3G2E1 16GB
Micron Technology 16ATF2G64HZ-3G2E1 16GB
内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
G Skill Intl F4-3400C16-16GTZ 16GB
G Skill Intl F4-3400C16-16GTZ 16GB
内存RAM