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Hexon Technology Pte Ltd HEXON 1GB
Kingston 9905665-011.A00G 4GB

Hexon Technology Pte Ltd HEXON 1GB vs Kingston 9905665-011.A00G 4GB

总分
star star star star star
Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分
star star star star star
Kingston 9905665-011.A00G 4GB

Kingston 9905665-011.A00G 4GB

差异 规格 评论

差异

Hexon Technology Pte Ltd HEXON 1GB 需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    62 left arrow 73
    左右 15% 更低的延时
  • 更快的读取速度，GB/s
    3 left arrow 13.6
    测试中的平均数值
Kingston 9905665-011.A00G 4GB 需要考虑的原因
Kingston 9905665-011.A00G 4GB
报告一个错误
  • 更快的写入速度，GB/s
    5.7 left arrow 1,843.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Hexon Technology Pte Ltd HEXON 1GB
Kingston 9905665-011.A00G 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    62 left arrow 73
  • 读取速度，GB/s
    3,556.6 left arrow 13.6
  • 写入速度，GB/s
    1,843.6 left arrow 5.7
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    542 left arrow 1439

Hexon Technology Pte Ltd HEXON 1GB RAM的比较

SpecTek Incorporated CONQUR6672GB-A023- 2GB
Qimonda 72T512220EP3SC2 4GB

Kingston 9905665-011.A00G 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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A-DATA Technology AO1P26KCST2-BWWS 16GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Kingston 9905665-011.A00G 4GB
Kingston 9905665-011.A00G 4GB
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Crucial Technology BLS4G4D240FSE.8FBD 4GB
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Micron Technology 16ATF2G64AZ-2G3H1 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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G Skill Intl F4-4000C17-8GTZR 8GB
内存RAM
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Apacer Technology AQD-D4U8GN24-SE 8GB
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Crucial Technology BLS16G4D30AESB.M16FE 16GB
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Kingston 9905403-011.A03LF 2GB
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内存RAM
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Kingston MSI16D3LS1MNG/8G 8GB
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Transcend Information TS2GLH64V6B 16GB
内存RAM
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Crucial Technology CT16G48C40U5.M8A1 16GB
SK Hynix HMT41GS6AFR8A-PB 8GB
SK Hynix HMT41GS6AFR8A-PB 8GB
内存RAM
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Samsung M471B5173QH0-YK0 4GB
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Avant Technology W6451U67J7240NB 4GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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内存RAM
Samsung M471B5173EB0-YK0 4GB
Samsung M471B5173EB0-YK0 4GB
Hynix Semiconductor (Hyundai Electronics) QUM3U-8G1600C11 8GB
Hynix Semiconductor (Hyundai Electronics) QUM3U-8G1600C
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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Corsair CMD8GX4M2B3866C18 4GB
内存RAM