Hexon Technology Pte Ltd HEXON 1GB vs Kingston 99U5700-027.A00G 8GB

总分

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分

Kingston 99U5700-027.A00G 8GB

Kingston 99U5700-027.A00G 8GB

差异规格评论

差异

Hexon Technology Pte Ltd HEXON 1GB

需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB

报告一个错误

更快的读取速度，GB/s

3 12.5

测试中的平均数值

Kingston 99U5700-027.A00G 8GB

需要考虑的原因
Kingston 99U5700-027.A00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

46 62

左右 -35% 更低的延时
更快的写入速度，GB/s

10.8 1,843.6

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Hexon Technology Pte Ltd HEXON 1GB

Kingston 99U5700-027.A00G 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 46
读取速度，GB/s

3,556.6 12.5
写入速度，GB/s

1,843.6 10.8
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

542 2325

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Golden Empire CL5-5-5DDR2 1GB

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Samsung M378B5673FH0-CH9 2GB

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Crucial Technology BLS8G4D30AESBK.M8FE 8GB

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Samsung M393B5170FH0-CK0 4GB

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Crucial Technology CT51264BD1339.M16F 4GB

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Micron Technology ILG8GS2400A 8GB

Micron Technology ILG8GS2400A 8GB

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

Kingston X74R9W-MIE 8GB

Kingston X74R9W-MIE 8GB

A-DATA Technology AD5U48008G-B 8GB

A-DATA Technology AD5U48008G-B 8GB

Crucial Technology BL16G26C16U4W.16FD 16GB

Crucial Technology BL16G26C16U4W.16FD 16GB

Kingston ACR16D3LS1NGG/2G 2GB

Kingston ACR16D3LS1NGG/2G 2GB

SK Hynix HMA82GS6CJR8N-UH 16GB

SK Hynix HMA82GS6CJR8N-UH 16GB