Hexon Technology Pte Ltd HEXON 1GB vs Kingston KGTWW1-MIE 4GB

总分

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分

Kingston KGTWW1-MIE 4GB

Kingston KGTWW1-MIE 4GB

差异规格评论

差异

Hexon Technology Pte Ltd HEXON 1GB

需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB

报告一个错误

低于PassMark测试中的延时，ns

62 97

左右 36% 更低的延时
更快的读取速度，GB/s

3 15.5

测试中的平均数值

Kingston KGTWW1-MIE 4GB

需要考虑的原因
Kingston KGTWW1-MIE 4GB

报告一个错误

更快的写入速度，GB/s

6.7 1,843.6

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Hexon Technology Pte Ltd HEXON 1GB

Kingston KGTWW1-MIE 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 97
读取速度，GB/s

3,556.6 15.5
写入速度，GB/s

1,843.6 6.7
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

542 1479

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BL8G32C16S4B.M8FE 8GB

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Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Kingston KGTWW1-MIE 4GB

Kingston KGTWW1-MIE 4GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

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Samsung M393B1K70QB0-CK0 8GB

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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Team Group Inc. UD5-6400 16GB

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Kingston 9965525-018.A00LF 4GB

Samsung M386A4G40DM1-CRC 32GB

Samsung M386A4G40DM1-CRC 32GB

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Samsung M393B1G70QH0-YK0 8GB

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Corsair CMD32GX4M4A2800C16 8GB

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AMD AE34G1601U1 4GB

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Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N

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Kingston K531R8-MIN 4GB

Corsair CMR32GX4M4D3000C16 8GB

Corsair CMR32GX4M4D3000C16 8GB