Hexon Technology Pte Ltd HEXON 1GB vs Ramaxel Technology RMSA3270MB86H9F2400 4GB

总分

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分

Ramaxel Technology RMSA3270MB86H9F2400 4GB

Ramaxel Technology RMSA3270MB86H9F2400 4GB

差异规格评论

差异

Hexon Technology Pte Ltd HEXON 1GB

需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB

报告一个错误

更快的读取速度，GB/s

3 14.4

测试中的平均数值

Ramaxel Technology RMSA3270MB86H9F2400 4GB

需要考虑的原因
Ramaxel Technology RMSA3270MB86H9F2400 4GB

报告一个错误

低于PassMark测试中的延时，ns

39 62

左右 -59% 更低的延时
更快的写入速度，GB/s

9.4 1,843.6

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Hexon Technology Pte Ltd HEXON 1GB

Ramaxel Technology RMSA3270MB86H9F2400 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 39
读取速度，GB/s

3,556.6 14.4
写入速度，GB/s

1,843.6 9.4
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

542 1966

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 18ASF2G72AZ-2G6D1 16GB

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SK Hynix HYMP112U64CP8-S5 1GB

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Corsair CMD64GX4M4C3200C16 16GB

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Kingston ACR16D3LS1NGG/2G 2GB

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Corsair CMK32GX4M4D3600C18 8GB

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Kingston 9905743-023.A00G 8GB

SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT41GS6AFR8A-PB 8GB

SK Hynix HMT41GS6AFR8A-PB 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Samsung M378A1G43TB1-CTD 8GB

Samsung M378A1G43TB1-CTD 8GB

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

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SK Hynix HMA82GU7MFR8N-TF 16GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Kingston KHX2133C14/16G 16GB

Kingston KHX2133C14/16G 16GB