RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hexon Technology Pte Ltd HEXON 1GB
SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB
比较
Hexon Technology Pte Ltd HEXON 1GB vs SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB
总分
Hexon Technology Pte Ltd HEXON 1GB
总分
SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB
差异
规格
评论
差异
需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB
报告一个错误
更快的读取速度,GB/s
3
17.3
测试中的平均数值
需要考虑的原因
SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB
报告一个错误
低于PassMark测试中的延时,ns
59
62
左右 -5% 更低的延时
更快的写入速度,GB/s
7.6
1,843.6
测试中的平均数值
更高的内存带宽,mbps
21300
6400
左右 3.33 更高的带宽
规格
完整的技术规格清单
Hexon Technology Pte Ltd HEXON 1GB
SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
62
59
读取速度,GB/s
3,556.6
17.3
写入速度,GB/s
1,843.6
7.6
内存带宽,mbps
6400
21300
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
542
1954
Hexon Technology Pte Ltd HEXON 1GB RAM的比较
SpecTek Incorporated CONQUR6672GB-A023- 2GB
Qimonda 72T512220EP3SC2 4GB
SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M395T2863QZ4-CF76 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hexon Technology Pte Ltd HEXON 1GB
SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Crucial Technology CT8G4DFD824A.C16FBR2 8GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
Kingston 99U5678-029.A00G 8GB
G Skill Intl F2-5300CL4-1GBSA 1GB
Crucial Technology BL8G26C16U4W.8FD 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
SK Hynix HMAA2GU6CJR8N-XN 16GB
Kingston 99U5584-010.A00LF 4GB
G Skill Intl F4-3200C15-16GTZR 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Micron Technology 18ASF1G72PDZ-2G1B1 8GB
Samsung M393B1G70BH0-CK0 8GB
Kingston 9905701-003.A00G 16GB
SK Hynix HMT325S6BFR8C-H9 2GB
Corsair CMK128GX4M4D3600C18 32GB
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix GKE160SO102408-2400 16GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB
Kingston 9905403-156.A00LF 2GB
OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
A-DATA Technology AE4S240038G17-BHYA 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Kingston XW21KG-HYD-NX 8GB
报告一个错误
×
Bug description
Source link