Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

A-DATA Technology AO1P29KC8T1-BY9SSB 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs A-DATA Technology AO1P29KC8T1-BY9SSB 8GB

总分

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

总分

A-DATA Technology AO1P29KC8T1-BY9SSB 8GB

A-DATA Technology AO1P29KC8T1-BY9SSB 8GB

差异规格评论

差异

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

需要考虑的原因
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

报告一个错误

A-DATA Technology AO1P29KC8T1-BY9SSB 8GB

需要考虑的原因
A-DATA Technology AO1P29KC8T1-BY9SSB 8GB

报告一个错误

更快的读取速度，GB/s

18.4 16.7

测试中的平均数值
更快的写入速度，GB/s

14.9 11.8

测试中的平均数值

规格

完整的技术规格清单

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

A-DATA Technology AO1P29KC8T1-BY9SSB 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

27 27
读取速度，GB/s

16.7 18.4
写入速度，GB/s

11.8 14.9
内存带宽，mbps

21300 21300

Other

描述

PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2756 3008

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Mushkin MR[A/B]4U266GHHF8G 8GB

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SK Hynix HMT325U6CFR8C-PB 2GB

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Kingston HP698651-154-MCN 8GB

Kingston HP698651-154-MCN 8GB

Crucial Technology CT4G4SFS824A.M8FE 4GB

Crucial Technology CT4G4SFS824A.M8FE 4GB

Samsung M378B5673EH1-CF8 2GB

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Kingston KV0M5R-MIE 8GB

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Kingston KHX1600C9D3/8G 8GB

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Micron Technology TEAMGROUP-UD4-3000 16GB

Micron Technology TEAMGROUP-UD4-3000 16GB