Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology BL8G36C16U4WL.M8FE1 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs Crucial Technology BL8G36C16U4WL.M8FE1 8GB

总分

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

总分

Crucial Technology BL8G36C16U4WL.M8FE1 8GB

Crucial Technology BL8G36C16U4WL.M8FE1 8GB

差异规格评论

差异

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

需要考虑的原因
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 31

左右 13% 更低的延时

Crucial Technology BL8G36C16U4WL.M8FE1 8GB

需要考虑的原因
Crucial Technology BL8G36C16U4WL.M8FE1 8GB

报告一个错误

更快的读取速度，GB/s

19.1 16.7

测试中的平均数值
更快的写入速度，GB/s

15.6 11.8

测试中的平均数值

规格

完整的技术规格清单

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology BL8G36C16U4WL.M8FE1 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

27 31
读取速度，GB/s

16.7 19.1
写入速度，GB/s

11.8 15.6
内存带宽，mbps

21300 21300

Other

描述

PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2756 3553

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BL8G36C16U4WL.M8FE1 8GB

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Samsung M3 78T3354BZ0-CCC 256MB

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V-GEN D4H4GL26A8TS5 4GB

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Micron Technology 8ATF1G64HZ-2G3B1 8GB

Micron Technology 8ATF1G64HZ-2G3B1 8GB