RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLE8G4D26AFEA.16FAD 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs Crucial Technology BLE8G4D26AFEA.16FAD 8GB

总分
star star star star star
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

总分
star star star star star
Crucial Technology BLE8G4D26AFEA.16FAD 8GB

Crucial Technology BLE8G4D26AFEA.16FAD 8GB

差异 规格 评论

差异

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB 需要考虑的原因
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 33
    左右 18% 更低的延时
  • 更快的读取速度，GB/s
    16.7 left arrow 16.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 19200
    左右 1.11% 更高的带宽
Crucial Technology BLE8G4D26AFEA.16FAD 8GB 需要考虑的原因
Crucial Technology BLE8G4D26AFEA.16FAD 8GB
报告一个错误
  • 更快的写入速度，GB/s
    12.1 left arrow 11.8
    测试中的平均数值

规格

完整的技术规格清单
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLE8G4D26AFEA.16FAD 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 33
  • 读取速度，GB/s
    16.7 left arrow 16.4
  • 写入速度，GB/s
    11.8 left arrow 12.1
  • 内存带宽，mbps
    21300 left arrow 19200
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2756 left arrow 2988

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB RAM的比较

Apacer Technology 78.CAGP7.4020B 8GB
G Skill Intl F4-3600C17-8GTZSW 8GB

Crucial Technology BLE8G4D26AFEA.16FAD 8GB RAM的比较

Kingston 9965525-155.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Lexar Co Limited LD4AU008G-H3200GST 8GB
Lexar Co Limited LD4AU008G-H3200GST 8GB
内存RAM
SK Hynix HMT41GU7BFR8A-PB 8GB
SK Hynix HMT41GU7BFR8A-PB 8GB
Heoriady M471A1K43BB1-CRC 16GB
Heoriady M471A1K43BB1-CRC 16GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Corsair CMK16GX4M1A2666C16 16GB
Corsair CMK16GX4M1A2666C16 16GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Kingston 9905701-132.A00G 16GB
Kingston 9905701-132.A00G 16GB
内存RAM
Samsung M471B5673FH0-CH9 2GB
Samsung M471B5673FH0-CH9 2GB
Micron Technology 36ASF2G72PZ-2G3A3 16GB
Micron Technology 36ASF2G72PZ-2G3A3 16GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Micron Technology 8ATF1G64HZ-2G6B1 8GB
Micron Technology 8ATF1G64HZ-2G6B1 8GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Apacer Technology GD2.1140CH.001 4GB
Apacer Technology GD2.1140CH.001 4GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
G Skill Intl F4-3200C16-32GTRG 32GB
G Skill Intl F4-3200C16-32GTRG 32GB
内存RAM
Kingston 9905471-001.A01LF 2GB
Kingston 9905471-001.A01LF 2GB
AMD R744G2133U1S 4GB
AMD R744G2133U1S 4GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
G Skill Intl F4-3000C14-16GTZ 16GB
G Skill Intl F4-3000C14-16GTZ 16GB
内存RAM
Kingston 9905469-143.A00LF 4GB
Kingston 9905469-143.A00LF 4GB
Kingston MSI24D4S7S8MH-8 8GB
Kingston MSI24D4S7S8MH-8 8GB
内存RAM
Kingston 99U5471-002.A00LF 2GB
Kingston 99U5471-002.A00LF 2GB
Kingston 99P5471-002.A01LF 2GB
Kingston 99P5471-002.A01LF 2GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
SK Hynix HMA81GU6AFR8N-UH 8GB
SK Hynix HMA81GU6AFR8N-UH 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Kingston 9905712-009.A00G 16GB
Kingston 9905712-009.A00G 16GB
内存RAM