Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology BLM16G40C18U4BL.M8FB 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs Crucial Technology BLM16G40C18U4BL.M8FB 16GB

总分

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

总分

Crucial Technology BLM16G40C18U4BL.M8FB 16GB

Crucial Technology BLM16G40C18U4BL.M8FB 16GB

差异规格评论

差异

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

需要考虑的原因
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 28

左右 4% 更低的延时

Crucial Technology BLM16G40C18U4BL.M8FB 16GB

需要考虑的原因
Crucial Technology BLM16G40C18U4BL.M8FB 16GB

报告一个错误

更快的读取速度，GB/s

19.6 16.7

测试中的平均数值
更快的写入速度，GB/s

15.7 11.8

测试中的平均数值

规格

完整的技术规格清单

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology BLM16G40C18U4BL.M8FB 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

27 28
读取速度，GB/s

16.7 19.6
写入速度，GB/s

11.8 15.7
内存带宽，mbps

21300 21300

Other

描述

PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2756 3807

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

Crucial Technology CT8G4DFS824A.M8FGM 8GB

Crucial Technology CT8G4DFS824A.M8FGM 8GB

Kingston 9905316-106.A02LF 1GB

Kingston 9905316-106.A02LF 1GB

Kingston KHX3600C18D4/16GX 16GB

Kingston KHX3600C18D4/16GX 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology CT16G4DFD8213.C16FH1 16GB

Crucial Technology CT16G4DFD8213.C16FH1 16GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

Golden Empire CL17-17-17 D4-2400 16GB

Golden Empire CL17-17-17 D4-2400 16GB

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

G Skill Intl F4-2400C15-4GIS 4GB

G Skill Intl F4-2400C15-4GIS 4GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

INTENSO 5641160 8GB

INTENSO 5641160 8GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Golden Empire CL15-15-15 D4-2400 4GB

Golden Empire CL15-15-15 D4-2400 4GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

G Skill Intl F4-3600C16-16GTRS 16GB

G Skill Intl F4-3600C16-16GTRS 16GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Crucial Technology BL16G36C16U4R.M8FB1 16GB

Crucial Technology BL16G36C16U4R.M8FB1 16GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

SK Hynix HMA81GU7CJR8N-VK 8GB

SK Hynix HMA81GU7CJR8N-VK 8GB

Patriot Memory (PDP Systems) 2400 C16 Series 16GB

Patriot Memory (PDP Systems) 2400 C16 Series 16GB

Patriot Memory (PDP Systems) 2400 C15 Series 4GB

Patriot Memory (PDP Systems) 2400 C15 Series 4GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Kingston 9905712-010.A00G 16GB

Kingston 9905712-010.A00G 16GB

Kingston HP16D3LS1KBGH/4G 4GB

Kingston HP16D3LS1KBGH/4G 4GB

Samsung M378A2K43BB1-CRC 16GB

Samsung M378A2K43BB1-CRC 16GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

ADVAN Inc AM42E28UD04T-NVL 4GB

ADVAN Inc AM42E28UD04T-NVL 4GB