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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS16G4D26BFSB.16FBD 16GB
比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs Crucial Technology BLS16G4D26BFSB.16FBD 16GB
总分
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
总分
Crucial Technology BLS16G4D26BFSB.16FBD 16GB
差异
规格
评论
差异
需要考虑的原因
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
报告一个错误
需要考虑的原因
Crucial Technology BLS16G4D26BFSB.16FBD 16GB
报告一个错误
低于PassMark测试中的延时,ns
22
27
左右 -23% 更低的延时
更快的读取速度,GB/s
17.9
16.7
测试中的平均数值
更快的写入速度,GB/s
12.6
11.8
测试中的平均数值
规格
完整的技术规格清单
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS16G4D26BFSB.16FBD 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
27
22
读取速度,GB/s
16.7
17.9
写入速度,GB/s
11.8
12.6
内存带宽,mbps
21300
21300
Other
描述
PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19
PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2756
3152
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB RAM的比较
Apacer Technology 78.CAGP7.4020B 8GB
G Skill Intl F4-3600C17-8GTZSW 8GB
Crucial Technology BLS16G4D26BFSB.16FBD 16GB RAM的比较
Patriot Memory (PDP Systems) PSD34G16002 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 9905471-002.A00LF 2GB
Crucial Technology CT32G4SFD8266.C16FE 32GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Mushkin 99[2/7/4]197F 8GB
Kingston KVT8FP-HYC 4GB
Samsung M471A2K43CB1-CTCT 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
G Skill Intl F4-2666C18-32GVK 32GB
Kingston 99U5584-001.A00LF 4GB
Micron Technology 16ATF4G64AZ-3G2B1 32GB
Kingston KVR16N11/8-SP 8GB
Thermaltake Technology Co Ltd R022D408GX2-3200C16A 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Crucial Technology CT16G4DFD8266.M16FE 16GB
Samsung M378B5673EH1-CF8 2GB
Micron Technology 36ASF4G72PZ-2G6D1 32GB
Samsung M471B1G73EB0-YK0 8GB
Xinshirui (Shenzhen) Electronics Co V01D4L84GB528528266
Kingston 99U5584-017.A00LF 4GB
Crucial Technology BLM8G40C18U4BL.M8FE1 8GB
Samsung M471B5674QH0-YK0 2GB
OCMEMORY OCM2933CL16-16GBH 16GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
G Skill Intl F4-4266C19-8GTZKW 8GB
Kingston KVR533D2N4 512MB
SK Hynix HMA851U6AFR6N-UH 4GB
Samsung 1600 CL10 Series 8GB
Micron Technology 16ATF2G64HZ-2G6E3 16GB
报告一个错误
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Bug description
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