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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS16G4D32AESE.M16FE 16GB
比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs Crucial Technology BLS16G4D32AESE.M16FE 16GB
总分
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
总分
Crucial Technology BLS16G4D32AESE.M16FE 16GB
差异
规格
评论
差异
需要考虑的原因
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
报告一个错误
更高的内存带宽,mbps
21300
19200
左右 1.11% 更高的带宽
需要考虑的原因
Crucial Technology BLS16G4D32AESE.M16FE 16GB
报告一个错误
低于PassMark测试中的延时,ns
26
27
左右 -4% 更低的延时
更快的读取速度,GB/s
18.9
16.7
测试中的平均数值
更快的写入速度,GB/s
16.2
11.8
测试中的平均数值
规格
完整的技术规格清单
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS16G4D32AESE.M16FE 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
27
26
读取速度,GB/s
16.7
18.9
写入速度,GB/s
11.8
16.2
内存带宽,mbps
21300
19200
Other
描述
PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2756
3857
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB RAM的比较
Apacer Technology 78.CAGP7.4020B 8GB
G Skill Intl F4-3600C17-8GTZSW 8GB
Crucial Technology BLS16G4D32AESE.M16FE 16GB RAM的比较
Samsung M3 93T5750CZA-CE6 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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AMD R538G1601U2S 8GB
Essencore Limited IM48GU88A30-FGGHMB 8GB
Samsung M393B2G70BH0-CK0 16GB
Micron Technology 16ATF2G64HZ-2G6E3 16GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
G Skill Intl F4-2400C17-16GIS 16GB
Essencore Limited KD48GU88C-26N1600 8GB
V-GEN D4S4GL32A16TS 4GB
Kingston 9905403-444.A00LF 4GB
Mushkin 99[2/7/4]192F 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMK32GX4M2L3200C16 16GB
报告一个错误
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Bug description
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