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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3600C16-16GTZRC 16GB
比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs G Skill Intl F4-3600C16-16GTZRC 16GB
总分
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
总分
G Skill Intl F4-3600C16-16GTZRC 16GB
差异
规格
评论
差异
需要考虑的原因
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
报告一个错误
低于PassMark测试中的延时,ns
27
28
左右 4% 更低的延时
更高的内存带宽,mbps
21300
17000
左右 1.25% 更高的带宽
需要考虑的原因
G Skill Intl F4-3600C16-16GTZRC 16GB
报告一个错误
更快的读取速度,GB/s
19.3
16.7
测试中的平均数值
更快的写入速度,GB/s
16.5
11.8
测试中的平均数值
规格
完整的技术规格清单
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3600C16-16GTZRC 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
27
28
读取速度,GB/s
16.7
19.3
写入速度,GB/s
11.8
16.5
内存带宽,mbps
21300
17000
Other
描述
PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2756
3889
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB RAM的比较
Apacer Technology 78.CAGP7.4020B 8GB
G Skill Intl F4-3600C17-8GTZSW 8GB
G Skill Intl F4-3600C16-16GTZRC 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Nanya Technology M2S4G64CB8HB5N-CG 4GB
Corsair CMW128GX4M4D3000C16 32GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingmax Semiconductor GLLG43F-D8KBGA------ 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Smart Modular SMS4TDC3C0K0446SCG 4GB
Kingston 99U5474-013.A00LF 2GB
Crucial Technology BL8G26C16U4B.8FE 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F4-3200C16-32GTZN 32GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Crucial Technology BLS4G4D240FSA.8FARG 4GB
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F4-4400C17-16GVK 16GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Nanya Technology M2Y51264TU88B0B-37 512MB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT16G4SFD824A.C16FBR 16GB
Crucial Technology CT51264BD1339.M16F 4GB
Patriot Memory (PDP Systems) PSD416G32002 16GB
Micron Technology 8ATF2G64AZ-3G2E1 16GB
Crucial Technology CT16G4DFRA32A.M16FJ1 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Samsung M3 91T2953GZ3-CF7 1GB
Corsair CMD16GX4M4B3600C18 4GB
Samsung M3 78T5663EH3-CF7 2GB
Corsair CMK8GX4M2B3000C15 4GB
报告一个错误
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Bug description
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