RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-4400C16-8GVK 8GB
比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs G Skill Intl F4-4400C16-8GVK 8GB
总分
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
总分
G Skill Intl F4-4400C16-8GVK 8GB
差异
规格
评论
差异
需要考虑的原因
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
报告一个错误
更高的内存带宽,mbps
21300
17000
左右 1.25% 更高的带宽
需要考虑的原因
G Skill Intl F4-4400C16-8GVK 8GB
报告一个错误
低于PassMark测试中的延时,ns
21
27
左右 -29% 更低的延时
更快的读取速度,GB/s
20.9
16.7
测试中的平均数值
更快的写入速度,GB/s
21.0
11.8
测试中的平均数值
规格
完整的技术规格清单
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-4400C16-8GVK 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
27
21
读取速度,GB/s
16.7
20.9
写入速度,GB/s
11.8
21.0
内存带宽,mbps
21300
17000
Other
描述
PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2756
4250
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB RAM的比较
Apacer Technology 78.CAGP7.4020B 8GB
G Skill Intl F4-3600C17-8GTZSW 8GB
G Skill Intl F4-4400C16-8GVK 8GB RAM的比较
A-DATA Technology AM2L16BC4R1-B0AS 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 99U5584-004.A00LF 4GB
Kingston KHX3200C20S4/16G 16GB
SK Hynix HMT351S6CFR8C-PB 4GB
SK Hynix HMA81GU6DJR8N-XN 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-4400C16-8GVK 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Micron Technology 8ATF1G64HZ-2G3B2 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 9905712-009.A00G 16GB
Samsung M471B5273EB0-CK0 4GB
G Skill Intl F4-2400C17-16GIS 16GB
Kingston 9905403-437.A01LF 4GB
Corsair CMD32GX4M4C3000C15 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N
Samsung DDR3 8GB 1600MHz 8GB
Chun Well Technology Holding Limited CL19-19-19 D4-2666
Corsair CMY8GX3M2A2666C10 4GB
Kingston 9905630-039.A00G 16GB
Golden Empire CL5-5-5DDR2 1GB
Ramaxel Technology RMSA3260MH78H8H-2666 8GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
A-DATA Technology DDR4 2800 2OZ 4GB
SK Hynix DDR2 800 2G 2GB
Ramaxel Technology RMUA5090KE68H9F2133 4GB
Samsung M378B5673FH0-CH9 2GB
G Skill Intl F4-3000C16-8GISB 8GB
报告一个错误
×
Bug description
Source link