Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB

总分

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

总分

Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB

Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB

差异规格评论

差异

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

需要考虑的原因
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 31

左右 13% 更低的延时
更快的读取速度，GB/s

16.7 16.4

测试中的平均数值
更快的写入速度，GB/s

11.8 10.5

测试中的平均数值

Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB

需要考虑的原因
Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB

报告一个错误

规格

完整的技术规格清单

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

27 31
读取速度，GB/s

16.7 16.4
写入速度，GB/s

11.8 10.5
内存带宽，mbps

21300 21300

Other

描述

PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2756 3039

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB

Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB

A-DATA Technology DDR2 800G 2GB

A-DATA Technology DDR2 800G 2GB

G Skill Intl F4-3000C16-8GTZR 8GB

G Skill Intl F4-3000C16-8GTZR 8GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB

Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Panram International Corporation D4N2666PS-16G 16GB

Panram International Corporation D4N2666PS-16G 16GB

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

Samsung M471A4G43MB1-CTD 32GB

Samsung M471A4G43MB1-CTD 32GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Kingston KF3000C16D4/32GX 32GB

Kingston KF3000C16D4/32GX 32GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Crucial Technology CT8G4SFRA32A.M4FE 8GB

Crucial Technology CT8G4SFRA32A.M4FE 8GB

Kingston 9965662-016.A00G 16GB

Kingston 9965662-016.A00G 16GB

Team Group Inc. DDR4 3600 8GB

Team Group Inc. DDR4 3600 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston 9905701-006.A00G 16GB

Kingston 9905701-006.A00G 16GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB

Xinshirui (Shenzhen) Electronics Co V01D4L84GB528528266

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Team Group Inc. TEAMGROUP-SD4-2133 8GB

Team Group Inc. TEAMGROUP-SD4-2133 8GB

AMD R748G2133U2S 8GB

AMD R748G2133U2S 8GB

Micron Technology 18ASF2G72AZ-2G3B1 16GB

Micron Technology 18ASF2G72AZ-2G3B1 16GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Kingston KCRXJ6-MIE 16GB

Kingston KCRXJ6-MIE 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8G