Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs Kingston ACR26D4U9S1KA-4 4GB

总分

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

总分

Kingston ACR26D4U9S1KA-4 4GB

Kingston ACR26D4U9S1KA-4 4GB

差异规格评论

差异

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

需要考虑的原因
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 33

左右 18% 更低的延时
更快的读取速度，GB/s

16.7 14.6

测试中的平均数值

Kingston ACR26D4U9S1KA-4 4GB

需要考虑的原因
Kingston ACR26D4U9S1KA-4 4GB

报告一个错误

更快的写入速度，GB/s

11.9 11.8

测试中的平均数值

规格

完整的技术规格清单

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Kingston ACR26D4U9S1KA-4 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

27 33
读取速度，GB/s

16.7 14.6
写入速度，GB/s

11.8 11.9
内存带宽，mbps

21300 21300

Other

描述

PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2756 2664

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Micron Technology 16ATF2G64AZ-2G3B1 16GB

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Samsung M471B5673FH0-CH9 2GB

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Apacer Technology D22.23263S.002 16GB

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G Skill Intl F4-4133C19-8GTZKKF 8GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Mushkin 99[2/7/4]192[F/T] 4GB

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Kingston 9905630-039.A00G 16GB

Kingston 9905630-039.A00G 16GB