Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs Micron Technology M471A1K43CB1-CTD 8GB

总分

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

总分

Micron Technology M471A1K43CB1-CTD 8GB

Micron Technology M471A1K43CB1-CTD 8GB

差异规格评论

差异

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

需要考虑的原因
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 38

左右 29% 更低的延时
更快的读取速度，GB/s

16.7 14.8

测试中的平均数值

Micron Technology M471A1K43CB1-CTD 8GB

需要考虑的原因
Micron Technology M471A1K43CB1-CTD 8GB

报告一个错误

更快的写入速度，GB/s

12.6 11.8

测试中的平均数值

规格

完整的技术规格清单

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Micron Technology M471A1K43CB1-CTD 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

27 38
读取速度，GB/s

16.7 14.8
写入速度，GB/s

11.8 12.6
内存带宽，mbps

21300 21300

Other

描述

PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2756 2825

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Micron Technology M471A1K43CB1-CTD 8GB

Micron Technology M471A1K43CB1-CTD 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Crucial Technology CT16G4DFD8213.M16FB 16GB

Crucial Technology CT16G4DFD8213.M16FB 16GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Micron Technology 72ASS4G72LZ-2G3A2 32GB

Micron Technology 72ASS4G72LZ-2G3A2 32GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-3000C16-16GISB 16GB

G Skill Intl F4-3000C16-16GISB 16GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Crucial Technology CT8G4SFS8213.M8FB 8GB

Crucial Technology CT8G4SFS8213.M8FB 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

Kingston KF3000C16D4/32GX 32GB

Kingston KF3000C16D4/32GX 32GB

Kingston 99U5584-007.A00LF 4GB

Kingston 99U5584-007.A00LF 4GB

G Skill Intl F4-2133C15-4GIS 4GB

G Skill Intl F4-2133C15-4GIS 4GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

G Skill Intl F4-3200C15-8GVR 8GB

G Skill Intl F4-3200C15-8GVR 8GB

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

Crucial Technology CT16G4DFS8266.C8FE 16GB

Crucial Technology CT16G4DFS8266.C8FE 16GB

Kingmax Semiconductor KLDE88F-B8MO5 2GB

Kingmax Semiconductor KLDE88F-B8MO5 2GB

Crucial Technology BL32G32C16U4BL.M16FB 32GB

Crucial Technology BL32G32C16U4BL.M16FB 32GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-2666C16-4GRB 4GB

G Skill Intl F4-2666C16-4GRB 4GB

Corsair CMD8GX3M2A2933C12 4GB

Corsair CMD8GX3M2A2933C12 4GB

Kingston ACR26D4U9S8MH-8 8GB

Kingston ACR26D4U9S8MH-8 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Panram International Corporation W4U2400PS-8G 8GB

Panram International Corporation W4U2400PS-8G 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Golden Empire CL16-20-20 D4-3200 16GB

Golden Empire CL16-20-20 D4-3200 16GB