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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Patriot Memory (PDP Systems) PSD416G26662S 16GB
比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs Patriot Memory (PDP Systems) PSD416G26662S 16GB
总分
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
总分
Patriot Memory (PDP Systems) PSD416G26662S 16GB
差异
规格
评论
差异
需要考虑的原因
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
报告一个错误
低于PassMark测试中的延时,ns
27
33
左右 18% 更低的延时
更快的读取速度,GB/s
16.7
16.4
测试中的平均数值
需要考虑的原因
Patriot Memory (PDP Systems) PSD416G26662S 16GB
报告一个错误
更快的写入速度,GB/s
14.1
11.8
测试中的平均数值
规格
完整的技术规格清单
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Patriot Memory (PDP Systems) PSD416G26662S 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
27
33
读取速度,GB/s
16.7
16.4
写入速度,GB/s
11.8
14.1
内存带宽,mbps
21300
21300
Other
描述
PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2756
3214
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB RAM的比较
Apacer Technology 78.CAGP7.4020B 8GB
G Skill Intl F4-3600C17-8GTZSW 8GB
Patriot Memory (PDP Systems) PSD416G26662S 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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A-DATA Technology AO1P26KCST2-BZISHC 16GB
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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston K6VDX7-HYD 8GB
SK Hynix HYMP125U64CP8-S6 2GB
SK Hynix HMA82GU7MFR8N-TF 16GB
TwinMOS 8DPT5MK8-TATP 2GB
Kingston CBD24D4S7S8MB-8 8GB
A-DATA Technology VDQVE1B16 2GB
Golden Empire CL15-15-15 D4-2666 4GB
Samsung M393B2G70BH0-CK0 16GB
Crucial Technology BLS4G4D240FSA.8FAR 4GB
Samsung M395T2863QZ4-CF76 1GB
Micron Technology 9ASF1G72PZ-2G3B1 8GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology BLS4G4D240FSC.8FBD2 4GB
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