RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB
比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB
总分
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
总分
Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB
差异
规格
评论
差异
需要考虑的原因
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
报告一个错误
低于PassMark测试中的延时,ns
27
30
左右 10% 更低的延时
更快的读取速度,GB/s
16.7
15.9
测试中的平均数值
更快的写入速度,GB/s
11.8
10.7
测试中的平均数值
需要考虑的原因
Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB
报告一个错误
规格
完整的技术规格清单
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
27
30
读取速度,GB/s
16.7
15.9
写入速度,GB/s
11.8
10.7
内存带宽,mbps
21300
21300
Other
描述
PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2756
2846
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB RAM的比较
Apacer Technology 78.CAGP7.4020B 8GB
G Skill Intl F4-3600C17-8GTZSW 8GB
Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Nanya Technology NT512T64U88B0BY-3C 512MB
SK Hynix HMA81GS6CJR8N-UH 8GB
Samsung M393B1K70QB0-CK0 8GB
Samsung M378A1K43EB2-CVF 8GB
AMD R538G1601U2S 8GB
G Skill Intl F4-2133C15-4GRB 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
A-DATA Technology AO1P32NC8T1-BZ4SHD 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BL16G30C15U4B.16FE 16GB
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-4000C19-16GTRS 16GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Corsair CMK32GX4M2A2400C16 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Corsair CMG64GX4M2D3600C18 32GB
Samsung M393B5170FH0-CK0 4GB
Patriot Memory (PDP Systems) PSD44G240081 4GB
Samsung M471B1G73DB0-YK0 8GB
Crucial Technology BLE4G4D26AFEA.8FBD 4GB
Corsair CML16GX3M2A1600C10 8GB
Kingston 9905734-003.A00G 32GB
Elpida EBE21UE8ACUA-8G-E 2GB
Crucial Technology CT8G4SFS8266.C8FN 8GB
报告一个错误
×
Bug description
Source link