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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB

总分
star star star star star
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

总分
star star star star star
Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB

Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB

差异 规格 评论

差异

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB 需要考虑的原因
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
报告一个错误
  • 更快的读取速度，GB/s
    16.7 left arrow 11.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.8 left arrow 6.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 17000
    左右 1.25% 更高的带宽
Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB 需要考虑的原因
Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB
报告一个错误

规格

完整的技术规格清单
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 27
  • 读取速度，GB/s
    16.7 left arrow 11.1
  • 写入速度，GB/s
    11.8 left arrow 6.0
  • 内存带宽，mbps
    21300 left arrow 17000
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2756 left arrow 1890

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB RAM的比较

Apacer Technology 78.CAGP7.4020B 8GB
G Skill Intl F4-3600C17-8GTZSW 8GB

Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB
Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-3200C16-8GTZR 8GB
G Skill Intl F4-3200C16-8GTZR 8GB
内存RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology BLS8G4D26BFSEK.8FBR 8GB
Crucial Technology BLS8G4D26BFSEK.8FBR 8GB
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Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
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Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
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Kingston KTP9W1-MID 16GB
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A-DATA Technology AX5U5200C3816G-B 16GB
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G Skill Intl F4-4266C19-32GTZR 32GB
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Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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Crucial Technology BLS8G4D240FSE.16FBD 8GB
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Nanya Technology M2Y1G64TU8HB0B-25C 1GB
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Corsair CMK32GX4M4K4133C19 8GB
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Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
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Crucial Technology CT8G4SFD8213.C16FBD2 8GB
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Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
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Crucial Technology BL8G30C15U4B.8FE 8GB
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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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V-Color Technology Inc. TN48G24S817-VHA/R 8GB
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Kingston KHX318C10FR/8G 8GB
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Corsair CM4X16GC3000C15D4 16GB
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Samsung M471B5673FH0-CF8 2GB
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Kingston X2YH1K-MIE 16GB
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Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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Mushkin MES4S213FF16G28 16GB
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