Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Wilk Elektronik S.A. GR2400D464L17S/8G 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs Wilk Elektronik S.A. GR2400D464L17S/8G 8GB

总分

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

总分

Wilk Elektronik S.A. GR2400D464L17S/8G 8GB

Wilk Elektronik S.A. GR2400D464L17S/8G 8GB

差异规格评论

差异

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

需要考虑的原因
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 28

左右 4% 更低的延时
更高的内存带宽，mbps

21300 19200

左右 1.11% 更高的带宽

Wilk Elektronik S.A. GR2400D464L17S/8G 8GB

需要考虑的原因
Wilk Elektronik S.A. GR2400D464L17S/8G 8GB

报告一个错误

更快的写入速度，GB/s

11.9 11.8

测试中的平均数值

规格

完整的技术规格清单

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Wilk Elektronik S.A. GR2400D464L17S/8G 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

27 28
读取速度，GB/s

16.7 16.7
写入速度，GB/s

11.8 11.9
内存带宽，mbps

21300 19200

Other

描述

PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2756 2948

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

G Skill Intl F4-3600C14-8GTRGB 8GB

G Skill Intl F4-3600C14-8GTRGB 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Wilk Elektronik S.A. GR2400D464L17S/8G 8GB

Wilk Elektronik S.A. GR2400D464L17S/8G 8GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

Kingston 8ATF1G64AZ-2G3A141 8GB

Kingston 8ATF1G64AZ-2G3A141 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Cortus SAS 8ATF1G64AZ-2G6E1 8GB

Cortus SAS 8ATF1G64AZ-2G6E1 8GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

V-Color Technology Inc. TL48G24S815RGB 8GB

V-Color Technology Inc. TL48G24S815RGB 8GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Kingston 9905701-132.A00G 16GB

Kingston 9905701-132.A00G 16GB

Nanya Technology M2X4G64CB8HG5N-DG 4GB

Nanya Technology M2X4G64CB8HG5N-DG 4GB

Apacer Technology 78.B1GN3.AZ32B 4GB

Apacer Technology 78.B1GN3.AZ32B 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Crucial Technology CT8G4SFS824A.M8FB 8GB

Crucial Technology CT8G4SFS824A.M8FB 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Wilk Elektronik S.A. IRH2666D464L19/16G 16GB

Wilk Elektronik S.A. IRH2666D464L19/16G 16GB

Kingston ACR16D3LS1KNG/8G 8GB

Kingston ACR16D3LS1KNG/8G 8GB

Crucial Technology CT4G4DFS8213.C8FBR2 4GB

Crucial Technology CT4G4DFS8213.C8FBR2 4GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Crucial Technology CT16G4DFD8266.C16FE 16GB

Crucial Technology CT16G4DFD8266.C16FE 16GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Samsung M393A1G40DB1-CRC 8GB

Samsung M393A1G40DB1-CRC 8GB

AMD AE34G2139U2 4GB

AMD AE34G2139U2 4GB

Avexir Technologies Corporation DDR4-3000 CL15 8GB 8GB

Avexir Technologies Corporation DDR4-3000 CL15 8GB 8GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

G Skill Intl F4-3000C15-4GTZB 4GB

G Skill Intl F4-3000C15-4GTZB 4GB