RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Wilk Elektronik S.A. IRH2400D464L17S/8G 8GB
比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs Wilk Elektronik S.A. IRH2400D464L17S/8G 8GB
总分
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
总分
Wilk Elektronik S.A. IRH2400D464L17S/8G 8GB
差异
规格
评论
差异
需要考虑的原因
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
报告一个错误
更高的内存带宽,mbps
21300
19200
左右 1.11% 更高的带宽
需要考虑的原因
Wilk Elektronik S.A. IRH2400D464L17S/8G 8GB
报告一个错误
低于PassMark测试中的延时,ns
23
27
左右 -17% 更低的延时
更快的写入速度,GB/s
11.9
11.8
测试中的平均数值
规格
完整的技术规格清单
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Wilk Elektronik S.A. IRH2400D464L17S/8G 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
27
23
读取速度,GB/s
16.7
16.7
写入速度,GB/s
11.8
11.9
内存带宽,mbps
21300
19200
Other
描述
PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2756
2886
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB RAM的比较
Apacer Technology 78.CAGP7.4020B 8GB
G Skill Intl F4-3600C17-8GTZSW 8GB
Wilk Elektronik S.A. IRH2400D464L17S/8G 8GB RAM的比较
Kingston 9905678-138.A00G 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston ACR16D3LS1NGG/2G 2GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16G
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMK16GX4M1E3200C16 16GB
G Skill Intl F3-1600C11-4GIS 4GB
Wilk Elektronik S.A. IRP3600D4V64L17/16G 16GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Crucial Technology BLS4G4D26BFSC.8FE 4GB
Corsair CMK64GX4M2D3600C18 32GB
Corsair CMK32GX4M2E3200C16 16GB
Kingston KVR533D2N4 512MB
Micron Technology CT8G4DFD8213.16FA11 8GB
A-DATA Technology DDR3 1333G 2GB
Crucial Technology BL8G26C16U4W.8FD 8GB
Samsung M393B2G70BH0-CH9 16GB
G Skill Intl F4-3333C16-8GTZB 8GB
A-DATA Technology AD73I1B1672EG 2GB
Crucial Technology CT16G4S24AM.M16FB 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3733C17-16GTZR 16GB
Kingston KVR533D2N4 512MB
Crucial Technology CT8G4SFD824A.M16FB 8GB
SK Hynix HMT351S6CFR8C-PB 4GB
G Skill Intl F4-2133C15-8GVR 8GB
Samsung M393B1K70CH0-CH9 8GB
V-Color Technology Inc. TL8G36818D-E6PRSWK 8GB
AMD AE34G1601U1 4GB
A-DATA Technology AD4U240038G17-BHYA 8GB
报告一个错误
×
Bug description
Source link