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Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-VK 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-UH 8GB
比较
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-VK 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-UH 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-VK 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-UH 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-VK 8GB
报告一个错误
更快的读取速度,GB/s
15.3
11.4
测试中的平均数值
更高的内存带宽,mbps
21300
19200
左右 1.11% 更高的带宽
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-UH 8GB
报告一个错误
更快的写入速度,GB/s
11.8
11.2
测试中的平均数值
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-VK 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-UH 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
27
27
读取速度,GB/s
15.3
11.4
写入速度,GB/s
11.2
11.8
内存带宽,mbps
21300
19200
Other
描述
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2545
2062
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-VK 8GB RAM的比较
TwinMOS 8DPT5MK8-TATP 2GB
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Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-UH 8GB RAM的比较
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Samsung M378B5673EH1-CF8 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N
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