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Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Corsair CMT128GX4M8X3600C18 16GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB vs Corsair CMT128GX4M8X3600C18 16GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
总分
Corsair CMT128GX4M8X3600C18 16GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
报告一个错误
低于PassMark测试中的延时,ns
28
35
左右 20% 更低的延时
需要考虑的原因
Corsair CMT128GX4M8X3600C18 16GB
报告一个错误
更快的读取速度,GB/s
17.2
12.4
测试中的平均数值
更快的写入速度,GB/s
16.8
9.6
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Corsair CMT128GX4M8X3600C18 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
28
35
读取速度,GB/s
12.4
17.2
写入速度,GB/s
9.6
16.8
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2329
3225
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB RAM的比较
Crucial Technology BLS8G3N18AES4.16FE 8GB
Nanya Technology NT4GC64B8HD0NS-CG 4GB
Corsair CMT128GX4M8X3600C18 16GB RAM的比较
Samsung M395T2863QZ4-CF76 1GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Nanya Technology NT4GC64B8HG0NS-CG 4GB
Kingston 9965669-027.A00G 16GB
Samsung M378B5273DH0-CH9 4GB
Crucial Technology BLS4G4D26BFSC.8FBR2 4GB
SK Hynix HMT151R7TFR4C-H9 4GB
Apacer Technology 78.DAGRL.4050C 16GB
Kingston 99U5403-036.A00G 4GB
SK Hynix HMA851S6CJR6N-UH 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Crucial Technology CT8G4DFS824A.M8FA 8GB
Kingston 9905474-019.A00LF 2GB
Corsair CMW16GX4M2C3200C14 8GB
报告一个错误
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Bug description
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