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Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-TF 16GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-TF 16GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-TF 16GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
报告一个错误
低于PassMark测试中的延时,ns
28
35
左右 20% 更低的延时
更快的读取速度,GB/s
12.4
10
测试中的平均数值
更快的写入速度,GB/s
9.6
7.9
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-TF 16GB
报告一个错误
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-TF 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
28
35
读取速度,GB/s
12.4
10.0
写入速度,GB/s
9.6
7.9
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2329
2200
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB RAM的比较
Crucial Technology BLS8G3N18AES4.16FE 8GB
Nanya Technology NT4GC64B8HD0NS-CG 4GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-TF 16GB RAM的比较
Team Group Inc. ZEUS-2133 8GB
Kingston 9905403-090.A01LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N
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报告一个错误
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