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Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB vs I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
总分
I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
报告一个错误
更快的读取速度,GB/s
12.4
11.8
测试中的平均数值
更快的写入速度,GB/s
9.6
5.3
测试中的平均数值
需要考虑的原因
I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB
报告一个错误
低于PassMark测试中的延时,ns
26
28
左右 -8% 更低的延时
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
28
26
读取速度,GB/s
12.4
11.8
写入速度,GB/s
9.6
5.3
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2329
1884
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB RAM的比较
Crucial Technology BLS8G3N18AES4.16FE 8GB
Nanya Technology NT4GC64B8HD0NS-CG 4GB
I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Kingston 9965525-018.A00LF 4GB
Crucial Technology CT8G4SFRA32A.C16FG 8GB
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OCMEMORY OCM3200CL16D-16GBN 8GB
Kingston ACR256X64D3S1333C9 2GB
Kingston 9905744-005.A00G 16GB
G Skill Intl F3-14900CL8-4GBXM 4GB
SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB
Samsung M471B5173DB0-YK0 4GB
Micron Technology 18ASF2G72PZ-2G3B1 16GB
Samsung M386B4G70DM0-CMA4 32GB
Corsair CMW16GX4M2Z3200C16 8GB
Samsung DDR3 8GB 1600MHz 8GB
Corsair CMSO16GX4M1A2133C15 16GB
Essencore Limited KD48GU88C-26N1600 8GB
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N
A-DATA Technology DOVF1B163G2G 2GB
Essencore Limited KD4AGU880-36A180U 16GB
Samsung M471B5173QH0-YK0 4GB
Corsair CMK32GX4M4B3200C16 8GB
Samsung M3 78T2863QZS-CF7 1GB
Samsung M391A1G43DB0-CPB 8GB
Kingston 9905316-106.A02LF 1GB
G Skill Intl F4-2400C15-8GRB 8GB
Samsung M471A5244CB0-CWE 4GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16G
报告一个错误
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