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Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Kingston KTD3KX-HYA 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB vs Kingston KTD3KX-HYA 8GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

总分
star star star star star
Kingston KTD3KX-HYA 8GB

Kingston KTD3KX-HYA 8GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 42
    左右 33% 更低的延时
  • 更快的读取速度，GB/s
    12.4 left arrow 7.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.6 left arrow 6.3
    测试中的平均数值
Kingston KTD3KX-HYA 8GB 需要考虑的原因
Kingston KTD3KX-HYA 8GB
报告一个错误
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Kingston KTD3KX-HYA 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 42
  • 读取速度，GB/s
    12.4 left arrow 7.4
  • 写入速度，GB/s
    9.6 left arrow 6.3
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2329 left arrow 1331

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB RAM的比较

Crucial Technology BLS8G3N18AES4.16FE 8GB
Nanya Technology NT4GC64B8HD0NS-CG 4GB

Kingston KTD3KX-HYA 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 99U5403-036.A00G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Kingston KTD3KX-HYA 8GB
Kingston KTD3KX-HYA 8GB
内存RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
Advantech Co Ltd SQR-UD4N16G2K6SNCB 16GB
Advantech Co Ltd SQR-UD4N16G2K6SNCB 16GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Kingston 9905702-014.A00G 8GB
Kingston 9905702-014.A00G 8GB
内存RAM
Mushkin 991679ES 996679ES 2GB
Mushkin 991679ES 996679ES 2GB
Wilk Elektronik S.A. GR2133S464L15S/8G 8GB
Wilk Elektronik S.A. GR2133S464L15S/8G 8GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Crucial Technology BLS4G4D240FSC.M8FADG 4GB
Crucial Technology BLS4G4D240FSC.M8FADG 4GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
G Skill Intl F4-4000C18-16GTRG 16GB
G Skill Intl F4-4000C18-16GTRG 16GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Kingston 9905713-004.A00G 4GB
Kingston 9905713-004.A00G 4GB
内存RAM
SK Hynix HYMP125U64CP8-S6 2GB
SK Hynix HYMP125U64CP8-S6 2GB
Avant Technology J642GU42J7240N4 16GB
Avant Technology J642GU42J7240N4 16GB
内存RAM
SK Hynix HMA82GS6CJR8N-VK 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
Samsung M471A1A43CB1-CRC 8GB
Samsung M471A1A43CB1-CRC 8GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Asgard VMA42UH-MEC1U2AJ2 16GB
Asgard VMA42UH-MEC1U2AJ2 16GB
内存RAM
AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB
Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB
内存RAM
Samsung M378B5773CH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB
Gold Key Technology Co Ltd NMUD480E85-3200E 8GB
Gold Key Technology Co Ltd NMUD480E85-3200E 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-2400C15-8GNS 8GB
G Skill Intl F4-2400C15-8GNS 8GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
G Skill Intl F4-2400C16-8GRSB 8GB
G Skill Intl F4-2400C16-8GRSB 8GB
内存RAM