Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB vs V-GEN D4H4GS24A8 4GB

总分

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

总分

V-GEN D4H4GS24A8 4GB

V-GEN D4H4GS24A8 4GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 94

左右 70% 更低的延时
更快的写入速度，GB/s

9.6 7.9

测试中的平均数值

V-GEN D4H4GS24A8 4GB

需要考虑的原因
V-GEN D4H4GS24A8 4GB

报告一个错误

更快的读取速度，GB/s

14.7 12.4

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

V-GEN D4H4GS24A8 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 94
读取速度，GB/s

12.4 14.7
写入速度，GB/s

9.6 7.9
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2329 1506

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Essencore Limited KD48GU880-34A170X 8GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Micron Technology 8ATF1G64AZ-3G2J1 8GB

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Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Corsair CMSO32GX4M2A2133C15 16GB

Corsair CMSO32GX4M2A2133C15 16GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

V-GEN D4H4GS24A8 4GB

V-GEN D4H4GS24A8 4GB

Kingston KHX1866C10D3/4G 4GB

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Team Group Inc. TEAMGROUP-UD4-3733 8GB

Team Group Inc. TEAMGROUP-UD4-3733 8GB

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Kingston KMKYF9-MIH 8GB

Kingston KMKYF9-MIH 8GB