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Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
G Skill Intl F4-3000C16-8GVRB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB vs G Skill Intl F4-3000C16-8GVRB 8GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB

总分
star star star star star
G Skill Intl F4-3000C16-8GVRB 8GB

G Skill Intl F4-3000C16-8GVRB 8GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 30
    左右 3% 更低的延时
G Skill Intl F4-3000C16-8GVRB 8GB 需要考虑的原因
G Skill Intl F4-3000C16-8GVRB 8GB
报告一个错误
  • 更快的读取速度，GB/s
    17 left arrow 12.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.2 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
G Skill Intl F4-3000C16-8GVRB 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 30
  • 读取速度，GB/s
    12.1 left arrow 17.0
  • 写入速度，GB/s
    7.8 left arrow 13.2
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2177 left arrow 3117

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB RAM的比较

G Skill Intl F3-12800CL9-4GBRL 4GB
Avant Technology W644GU44J2320NH 32GB

G Skill Intl F4-3000C16-8GVRB 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M386B4G70DM0-CMA4 32GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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