RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
G Skill Intl F4-3000C16-8GVRB 8GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB vs G Skill Intl F4-3000C16-8GVRB 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
总分
G Skill Intl F4-3000C16-8GVRB 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
报告一个错误
低于PassMark测试中的延时,ns
29
30
左右 3% 更低的延时
需要考虑的原因
G Skill Intl F4-3000C16-8GVRB 8GB
报告一个错误
更快的读取速度,GB/s
17
12.1
测试中的平均数值
更快的写入速度,GB/s
13.2
7.8
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
G Skill Intl F4-3000C16-8GVRB 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
29
30
读取速度,GB/s
12.1
17.0
写入速度,GB/s
7.8
13.2
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2177
3117
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB RAM的比较
G Skill Intl F3-12800CL9-4GBRL 4GB
Avant Technology W644GU44J2320NH 32GB
G Skill Intl F4-3000C16-8GVRB 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M386B4G70DM0-CMA4 32GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Crucial Technology CT51264BD1339.M16F 4GB
Kingston 9905624-019.A00G 8GB
Smart Modular SF564128CJ8N6NNSEG 4GB
Samsung M474A2K43BB1-CPB 16GB
Apacer Technology 78.01G86.9H50C 1GB
Crucial Technology CT16G4SFD8266.M16FH 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingston 9905622-058.A00G 8GB
Samsung M378T5663QZ3-CF7 2GB
Kingston 9905744-062.A00G 32GB
Samsung M391B5673FH0-CH9 2GB
Crucial Technology BL8G30C15U4R.8FE 8GB
Samsung M3 78T2953EZ3-CF7 1GB
Corsair CMSX8GX4M1A2400C16 8GB
Kingston KVR800D2N6/2G 2GB
Corsair CMD16GX4M4B3000C14 4GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Corsair CMD128GX4M8B3000C16 16GB
Samsung M3 78T5663RZ3-CE6 2GB
Corsair CMK16GX4M2B3733C17 8GB
Samsung M471B5673FH0-CF8 2GB
Corsair CMK4GX4M1A2400C16 4GB
Kingston 99U5584-005.A00LF 4GB
Crucial Technology CT16G4SFD824A.C16FBD 16GB
SK Hynix HMT425S6AFR6A-PB 2GB
Kingston 9905744-023.A00G 16GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
Crucial Technology CT16G4SFRA32A.C8FB 16GB
报告一个错误
×
Bug description
Source link