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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Crucial Technology BLE4G4D32AEEA.K8FD 4GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB vs Crucial Technology BLE4G4D32AEEA.K8FD 4GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
总分
Crucial Technology BLE4G4D32AEEA.K8FD 4GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
报告一个错误
需要考虑的原因
Crucial Technology BLE4G4D32AEEA.K8FD 4GB
报告一个错误
低于PassMark测试中的延时,ns
23
29
左右 -26% 更低的延时
更快的读取速度,GB/s
17.3
13.4
测试中的平均数值
更快的写入速度,GB/s
13.0
9.0
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Crucial Technology BLE4G4D32AEEA.K8FD 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
29
23
读取速度,GB/s
13.4
17.3
写入速度,GB/s
9.0
13.0
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2423
2993
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) HMT451U6BFR8C-PB 4GB
Corsair CMW16GX4M2Z4000C18 8GB
Crucial Technology BLE4G4D32AEEA.K8FD 4GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M393B1K70CH0-CH9 8GB
Corsair CMK128GX4M4A2666C16 32GB
Samsung M393B1G70BH0-CK0 8GB
Avant Technology W641GU48J7240ND 8GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Crucial Technology CT16G4SFD824A.C16FDD 16GB
Elpida EBJ81UG8BBU0-GN-F 8GB
Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB
Micron Technology 16HTF25664AY-800J1 2GB
Crucial Technology CT25664AA800.C16FH 2GB
Corsair CMD8GX3M2A2933C12 4GB
V-GEN D4H16GS24A8 16GB
Samsung M3 78T2863QZS-CF7 1GB
Micron Technology 4ATF1G64AZ-3G2E1 8GB
AMD AE34G1601U1 4GB
V-Color Technology Inc. TD8G16C16-UHK 8GB
A-DATA Technology DDR3 1600 4GB
Corsair CMT32GX4M2C3200C16 16GB
Samsung M3 78T5663RZ3-CF7 2GB
SK Hynix HMA82GR7JJR8N-VK 16GB
TwinMOS 8DPT5MK8-TATP 2GB
Micron Technology 18ASF1G72PDZ-2G1A1 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Micron Technology 8ATF1G64HZ-2G1A1 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Patriot Memory (PDP Systems) PSD48G320081 8GB
G Skill Intl F3-2666C12-8GTXD 8GB
Corsair CMT64GX4M8X3600C18 8GB
报告一个错误
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Bug description
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