Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Crucial Technology CT8G4DFS8266.M8FE 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB vs Crucial Technology CT8G4DFS8266.M8FE 8GB

总分

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

总分

Crucial Technology CT8G4DFS8266.M8FE 8GB

Crucial Technology CT8G4DFS8266.M8FE 8GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

报告一个错误

Crucial Technology CT8G4DFS8266.M8FE 8GB

需要考虑的原因
Crucial Technology CT8G4DFS8266.M8FE 8GB

报告一个错误

更快的读取速度，GB/s

17.2 13.4

测试中的平均数值
更快的写入速度，GB/s

13.6 9.0

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Crucial Technology CT8G4DFS8266.M8FE 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

29 29
读取速度，GB/s

13.4 17.2
写入速度，GB/s

9.0 13.6
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2423 3294

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Apacer Technology 78.01G86.9H50C 1GB

Crucial Technology CT8G4DFS824A.C8FBR1 8GB

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Samsung M393B5170FH0-CH9 4GB

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Crucial Technology BLS8G4D240FSE.M16FAD 8GB

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AMD AE34G1601U1 4GB

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