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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Crucial Technology BL16G26C16U4R.16FE 16GB
比较
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs Crucial Technology BL16G26C16U4R.16FE 16GB
总分
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
总分
Crucial Technology BL16G26C16U4R.16FE 16GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
报告一个错误
更快的读取速度,GB/s
3
17.1
测试中的平均数值
需要考虑的原因
Crucial Technology BL16G26C16U4R.16FE 16GB
报告一个错误
低于PassMark测试中的延时,ns
29
65
左右 -124% 更低的延时
更快的写入速度,GB/s
13.0
1,592.0
测试中的平均数值
更高的内存带宽,mbps
21300
5300
左右 4.02 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Crucial Technology BL16G26C16U4R.16FE 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
65
29
读取速度,GB/s
3,580.8
17.1
写入速度,GB/s
1,592.0
13.0
内存带宽,mbps
5300
21300
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
572
3384
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB RAM的比较
Samsung M471B5773DH0-CK0 2GB
Kingston 99U5295-011.A00LF 2GB
Crucial Technology BL16G26C16U4R.16FE 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Crucial Technology BL16G26C16U4R.16FE 16GB
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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Crucial Technology BL16G30C15U4R.M16FE1 16GB
报告一个错误
×
Bug description
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