Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

G Skill Intl F4-3200C14-16GTZN 16GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs G Skill Intl F4-3200C14-16GTZN 16GB

总分

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

总分

G Skill Intl F4-3200C14-16GTZN 16GB

G Skill Intl F4-3200C14-16GTZN 16GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

报告一个错误

更快的读取速度，GB/s

3 18

测试中的平均数值

G Skill Intl F4-3200C14-16GTZN 16GB

需要考虑的原因
G Skill Intl F4-3200C14-16GTZN 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 65

左右 -141% 更低的延时
更快的写入速度，GB/s

14.3 1,592.0

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

G Skill Intl F4-3200C14-16GTZN 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 27
读取速度，GB/s

3,580.8 18.0
写入速度，GB/s

1,592.0 14.3
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

572 3288

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston 9965516-430.A00G 16GB

Kingston 9965516-430.A00G 16GB

A-DATA Technology AO1P21FC8T1-BSKS 8GB

A-DATA Technology AO1P21FC8T1-BSKS 8GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

Crucial Technology BL16G36C16U4R.M16FE1 16GB

Crucial Technology BL16G36C16U4R.M16FE1 16GB

Kingston 9905458-017.A01LF 4GB

Kingston 9905458-017.A01LF 4GB

Kingston 9905700-025.A00G 8GB

Kingston 9905700-025.A00G 8GB

Kingston 9965516-430.A00G 16GB

Kingston 9965516-430.A00G 16GB

Crucial Technology BL8G26C16U4B.8FE 8GB

Crucial Technology BL8G26C16U4B.8FE 8GB

Samsung M393B1G70QH0-YK0 8GB

Samsung M393B1G70QH0-YK0 8GB

Micron Technology 16ATF2G64HZ-2G3H1 16GB

Micron Technology 16ATF2G64HZ-2G3H1 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Samsung M393A5143DB0-CRC 4GB

Samsung M393A5143DB0-CRC 4GB

Kingston 99U5474-028.A00LF 4GB

Kingston 99U5474-028.A00LF 4GB

G Skill Intl F4-3200C14-16GFX 16GB

G Skill Intl F4-3200C14-16GFX 16GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Wilk Elektronik S.A. GR2133D464L15S/4G 4GB

Wilk Elektronik S.A. GR2133D464L15S/4G 4GB

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

Crucial Technology BLS16G4D240FSB.16FAD 16GB

Crucial Technology BLS16G4D240FSB.16FAD 16GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Crucial Technology CT25664AC667.C16FH 2GB

Crucial Technology CT25664AC667.C16FH 2GB

Kingston 99U5403-036.A00G 4GB

Kingston 99U5403-036.A00G 4GB

AMD R9S48G3206U2S 8GB

AMD R9S48G3206U2S 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Avant Technology W642GU42J5213N2 16GB

Avant Technology W642GU42J5213N2 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Samsung M393A5143DB0-CRC 4GB

Samsung M393A5143DB0-CRC 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingston 9965669-032.A00G 16GB

Kingston 9965669-032.A00G 16GB