Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs InnoDisk Corporation 16GB

总分

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

总分

InnoDisk Corporation 16GB

InnoDisk Corporation 16GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

报告一个错误

InnoDisk Corporation 16GB

需要考虑的原因
InnoDisk Corporation 16GB

报告一个错误

低于PassMark测试中的延时，ns

38 65

左右 -71% 更低的延时
更快的读取速度，GB/s

7.7 3

测试中的平均数值
更快的写入速度，GB/s

8.2 1,592.0

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

InnoDisk Corporation 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 38
读取速度，GB/s

3,580.8 7.7
写入速度，GB/s

1,592.0 8.2
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

572 2163

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KVR800D2N6/2G 2GB

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Kingmax Semiconductor GLAG43F-18---------- 8GB

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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

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Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

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G Skill Intl F4-3200C16-16GTRG 16GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

SK Hynix HMA82GR8AMR4N-TF 16GB

SK Hynix HMA82GR8AMR4N-TF 16GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Kingston KHX2133C14D4/4G 4GB

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INTENSO M418039 8GB

INTENSO M418039 8GB