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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Kingston 9965669-018.A00G 16GB
比较
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs Kingston 9965669-018.A00G 16GB
总分
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
总分
Kingston 9965669-018.A00G 16GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
报告一个错误
更快的读取速度,GB/s
3
12.1
测试中的平均数值
需要考虑的原因
Kingston 9965669-018.A00G 16GB
报告一个错误
低于PassMark测试中的延时,ns
31
65
左右 -110% 更低的延时
更快的写入速度,GB/s
8.3
1,592.0
测试中的平均数值
更高的内存带宽,mbps
19200
5300
左右 3.62 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Kingston 9965669-018.A00G 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
65
31
读取速度,GB/s
3,580.8
12.1
写入速度,GB/s
1,592.0
8.3
内存带宽,mbps
5300
19200
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
572
2460
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB RAM的比较
Samsung M471B5773DH0-CK0 2GB
Kingston 99U5295-011.A00LF 2GB
Kingston 9965669-018.A00G 16GB RAM的比较
Crucial Technology BLS4G4S26BFSD.8FBD2 4GB
Corsair CMSX8GX4M1A2400C16 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
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INTENSO M418039 8GB
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Kingston 9905734-062.A00G 32GB
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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Kingston 9965669-018.A00G 16GB
Peak Electronics 256X64M-67E 2GB
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Nanya Technology M2X4G64CB8HG9N-DG 4GB
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Kingston KP4T2F-PSB 4GB
Crucial Technology CT8G4SFD824A.C16FBD2 8GB
报告一个错误
×
Bug description
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