RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Kllisre 99P5428-002.A00LF 8GB
比较
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs Kllisre 99P5428-002.A00LF 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
总分
Kllisre 99P5428-002.A00LF 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
报告一个错误
更快的读取速度,GB/s
3
11.2
测试中的平均数值
需要考虑的原因
Kllisre 99P5428-002.A00LF 8GB
报告一个错误
低于PassMark测试中的延时,ns
47
65
左右 -38% 更低的延时
更快的写入速度,GB/s
7.9
1,592.0
测试中的平均数值
更高的内存带宽,mbps
21300
5300
左右 4.02 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Kllisre 99P5428-002.A00LF 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
65
47
读取速度,GB/s
3,580.8
11.2
写入速度,GB/s
1,592.0
7.9
内存带宽,mbps
5300
21300
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
572
2227
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB RAM的比较
Samsung M471B5773DH0-CK0 2GB
Kingston 99U5295-011.A00LF 2GB
Kllisre 99P5428-002.A00LF 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Kllisre 99P5428-002.A00LF 8GB
Samsung M393B2G70BH0-YK0 16GB
Team Group Inc. TEAMGROUP-D4-3866 4GB
TwinMOS 8DHE3MN8-HATP 2GB
InnoDisk Corporation M4UI-AGS1KC0K-C 16GB
Samsung M393B1G70BH0-CK0 8GB
Kingston XN205T-MIE2 16GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Corsair CMD32GX4M4C3200C14C 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology BL8G36C16U4RL.M8FE1 8GB
A-DATA Technology DDR3 1600 4GB
Chun Well Technology Holding Limited CL16-18-18 D4-2666
SK Hynix HMT425S6CFR6A-PB 2GB
G Skill Intl F4-3200C16-8GVK 8GB
Samsung 1600 CL10 Series 8GB
Corsair CMK16GX4M4A2400C14 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT16G4SFD832A.M16FRS 16GB
Kingston 9965433-034.A00LF 4GB
Kingston ACR26D4U9D8ME-16 16GB
Samsung M378B5673EH1-CF8 2GB
Netac Technology Co Ltd E40832A 8GB
Crucial Technology CT25664BA160B.C16F 2GB
Ramaxel Technology RMUA5110KE68H9F-2400 4GB
SK Hynix HMT351S6BFR8C-H9 4GB
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
报告一个错误
×
Bug description
Source link