Kingmax Semiconductor FLFE85F-C8KL9 2GB vs Corsair CMD128GX4M8B3000C16 16GB

总分

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

总分

Corsair CMD128GX4M8B3000C16 16GB

Corsair CMD128GX4M8B3000C16 16GB

差异规格评论

差异

Kingmax Semiconductor FLFE85F-C8KL9 2GB

需要考虑的原因
Kingmax Semiconductor FLFE85F-C8KL9 2GB

报告一个错误

Corsair CMD128GX4M8B3000C16 16GB

需要考虑的原因
Corsair CMD128GX4M8B3000C16 16GB

报告一个错误

低于PassMark测试中的延时，ns

26 27

左右 -4% 更低的延时
更快的读取速度，GB/s

14.8 10.1

测试中的平均数值
更快的写入速度，GB/s

10.2 6.2

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Corsair CMD128GX4M8B3000C16 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 26
读取速度，GB/s

10.1 14.8
写入速度，GB/s

6.2 10.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1411 3035

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 16JTF51264HZ-1G6M1 4GB

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Corsair CMK16GX4M4A2133C13 4GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

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Kingmax Semiconductor FLFE85F-C8KM9 2GB

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Samsung M378B5273CH0-CH9 4GB

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A-DATA Technology AO1P32NC8W1-BD2SHC 8GB

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Kingston KHX318C10FR/8G 8GB

G Skill Intl F4-3300C16-16GTZKW 16GB

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Kingston KHX2400C11D3/4GX 4GB

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Samsung M471A2K43CBCBCRC 16GB