Kingmax Semiconductor FLFE85F-C8KL9 2GB vs Crucial Technology CT16G4SFD8213.M16FB 16GB

总分

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

总分

Crucial Technology CT16G4SFD8213.M16FB 16GB

Crucial Technology CT16G4SFD8213.M16FB 16GB

差异规格评论

差异

Kingmax Semiconductor FLFE85F-C8KL9 2GB

需要考虑的原因
Kingmax Semiconductor FLFE85F-C8KL9 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 28

左右 4% 更低的延时

Crucial Technology CT16G4SFD8213.M16FB 16GB

需要考虑的原因
Crucial Technology CT16G4SFD8213.M16FB 16GB

报告一个错误

更快的读取速度，GB/s

13.7 10.1

测试中的平均数值
更快的写入速度，GB/s

10.9 6.2

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Crucial Technology CT16G4SFD8213.M16FB 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 28
读取速度，GB/s

10.1 13.7
写入速度，GB/s

6.2 10.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1411 2505

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMW64GX4M4C3466C16 16GB

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Samsung M393B1K70QB0-CK0 8GB

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Corsair CMD64GX4M4B3466C16 16GB

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PNY Electronics PNY 2GB

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Corsair CMK16GX4M2D3600C16 8GB

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Micron Technology 36ASF2G72PZ-2G6E1 16GB

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G Skill Intl F5-6400J3239G16G 16GB

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Kingston 9905678-027.A00G 8GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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SK Hynix HMA451U6MFR8N-TF 4GB

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Samsung M378A1K43EB2-CWE 8GB

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Crucial Technology BLS8G4S240FSD.16FBD2 8GB

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Apacer Technology 78.CAGPW.40C0B 8GB

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