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Kingmax Semiconductor FLFE85F-C8KL9 2GB
G Skill Intl F4-3000C14-8GTZ 8GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB vs G Skill Intl F4-3000C14-8GTZ 8GB

总分
star star star star star
Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

总分
star star star star star
G Skill Intl F4-3000C14-8GTZ 8GB

G Skill Intl F4-3000C14-8GTZ 8GB

差异 规格 评论

差异

Kingmax Semiconductor FLFE85F-C8KL9 2GB 需要考虑的原因
Kingmax Semiconductor FLFE85F-C8KL9 2GB
报告一个错误
G Skill Intl F4-3000C14-8GTZ 8GB 需要考虑的原因
G Skill Intl F4-3000C14-8GTZ 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 27
    左右 -13% 更低的延时
  • 更快的读取速度，GB/s
    17.9 left arrow 10.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.6 left arrow 6.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Kingmax Semiconductor FLFE85F-C8KL9 2GB
G Skill Intl F4-3000C14-8GTZ 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 24
  • 读取速度，GB/s
    10.1 left arrow 17.9
  • 写入速度，GB/s
    6.2 left arrow 13.6
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1411 left arrow 3346

Kingmax Semiconductor FLFE85F-C8KL9 2GB RAM的比较

CompuStocx (CSX) 2GB
Crucial Technology CT8G4DFS8213.M8FH 8GB

G Skill Intl F4-3000C14-8GTZ 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
Samsung M378A1K43BB2-CRC 8GB
Samsung M378A1K43BB2-CRC 8GB
内存RAM
Kingston KHX318C10FR/8G 8GB
Kingston KHX318C10FR/8G 8GB
G Skill Intl F4-3866C18-4GVK 4GB
G Skill Intl F4-3866C18-4GVK 4GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
G Skill Intl F4-3000C14-8GTZ 8GB
G Skill Intl F4-3000C14-8GTZ 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Essencore Limited IM48GU48N24-FFFHM 8GB
Essencore Limited IM48GU48N24-FFFHM 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-3200C16-8GSXFB 8GB
G Skill Intl F4-3200C16-8GSXFB 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung SF4721G4CKHH6DFSDS 8GB
Samsung SF4721G4CKHH6DFSDS 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Kingston KP6FH5-MIE 32GB
Kingston KP6FH5-MIE 32GB
内存RAM
Kingston 9965516-430.A00G 16GB
Kingston 9965516-430.A00G 16GB
V-GEN D4H4GS24A8 4GB
V-GEN D4H4GS24A8 4GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Samsung M393A2K40CB1-CRC 16GB
Samsung M393A2K40CB1-CRC 16GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Micron Technology 16ATF1G64AZ-2G3A2 8GB
Micron Technology 16ATF1G64AZ-2G3A2 8GB
内存RAM
Crucial Technology BLS8G3N18AES4.16FE 8GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Avant Technology J641GU42J7240N3 8GB
Avant Technology J641GU42J7240N3 8GB
内存RAM
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Crucial Technology CT16G4SFRA32A.C8FE 16GB
Crucial Technology CT16G4SFRA32A.C8FE 16GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Golden Empire CL15-17-17 D4-2666 8GB
Golden Empire CL15-17-17 D4-2666 8GB
内存RAM
SK Hynix HMT325S6CFR8C-H9 2GB
SK Hynix HMT325S6CFR8C-H9 2GB
Kingston 9905624-018.A00G 8GB
Kingston 9905624-018.A00G 8GB
内存RAM