Kingmax Semiconductor FLFE85F-C8KL9 2GB vs Micron Technology 16ATF2G64AZ-2G6E1 16GB

总分

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

总分

Micron Technology 16ATF2G64AZ-2G6E1 16GB

Micron Technology 16ATF2G64AZ-2G6E1 16GB

差异规格评论

差异

Kingmax Semiconductor FLFE85F-C8KL9 2GB

需要考虑的原因
Kingmax Semiconductor FLFE85F-C8KL9 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 38

左右 29% 更低的延时

Micron Technology 16ATF2G64AZ-2G6E1 16GB

需要考虑的原因
Micron Technology 16ATF2G64AZ-2G6E1 16GB

报告一个错误

更快的读取速度，GB/s

15 10.1

测试中的平均数值
更快的写入速度，GB/s

12.5 6.2

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Micron Technology 16ATF2G64AZ-2G6E1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 38
读取速度，GB/s

10.1 15.0
写入速度，GB/s

6.2 12.5
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1411 3005

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Avexir Technologies Corporation DDR4-2133 CL15 16GB 16GB

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Strontium EVMT8G1600U86S 8GB

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G Skill Intl F4-4133C19-8GTZR 8GB

G Skill Intl F4-4133C19-8GTZR 8GB

Samsung M393B1G70QH0-YK0 8GB

Samsung M393B1G70QH0-YK0 8GB

Samsung M471A5143DB0-CPB 4GB

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Crucial Technology CT51264BD1339.M16F 4GB

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Essencore Limited IM44GU48N21-FFFHM 4GB

Essencore Limited IM44GU48N21-FFFHM 4GB

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Samsung M391B5673EH1-CH9 2GB

Ramaxel Technology RMSA3310ME96HAF-3200 8GB

Ramaxel Technology RMSA3310ME96HAF-3200 8GB

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

Wilk Elektronik S.A. W-HK26S16G 16GB

Wilk Elektronik S.A. W-HK26S16G 16GB