Kingmax Semiconductor FLGF65F-C8KJ9A 4GB vs G Skill Intl F4-3000C15-8GRKB 8GB

总分

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

总分

G Skill Intl F4-3000C15-8GRKB 8GB

G Skill Intl F4-3000C15-8GRKB 8GB

差异规格评论

差异

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

需要考虑的原因
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

报告一个错误

G Skill Intl F4-3000C15-8GRKB 8GB

需要考虑的原因
G Skill Intl F4-3000C15-8GRKB 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 22

左右 -10% 更低的延时
更快的读取速度，GB/s

18.9 15.1

测试中的平均数值
更快的写入速度，GB/s

15.0 10.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

G Skill Intl F4-3000C15-8GRKB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

22 20
读取速度，GB/s

15.1 18.9
写入速度，GB/s

10.0 15.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2423 3281

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 99U5474-010.A00LF 2GB

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Samsung M471A1K43DB1-CTD 8GB

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Elpida EBJ40UG8EFU0-GN-F 4GB

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Corsair CMK64GX4M8X4133C19 8GB

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Micron Technology CT8G4DFD8213.16FA2 8GB

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Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Crucial Technology BLS16G4D26BFSE.16FBD 16GB

Crucial Technology BLS16G4D26BFSE.16FBD 16GB

Kingston 99U5403-465.A00LF 8GB

Kingston 99U5403-465.A00LF 8GB

Crucial Technology CT4G4DFS8213.C8FAR 4GB

Crucial Technology CT4G4DFS8213.C8FAR 4GB

Samsung M393B5270CH0-CH9 4GB

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SK Hynix HMA41GR7AFR8N-TF 8GB

SK Hynix HMA41GR7AFR8N-TF 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Kingston 9905624-019.A00G 8GB

Kingston 9905624-019.A00G 8GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Corsair CM4B8G1L2666A18S4 8GB

Corsair CM4B8G1L2666A18S4 8GB